A4915
3-Phase MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued) Valid at TA = 25°C, VBB = 24 V; unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Protection (continued)
Bootstrap Undervoltage
VBOOTUV Measured as a percentage of VREG
VBOOTUVhys Measured as a percentage of VREG
55
–
–
20
65
–
%
%
Bootstrap Undervoltage Hysteresis
VDD rising
VDDUV
–
2.75
2.6
100
–
2.95
–
V
VDD Undervoltage
VDD falling
2.45
50
–
V
VDD Undervoltage Hysteresis
Sleep Wake-up Delay
Gate Drive
VDDUVhys
tWAKE
150
3
mV
ms
CBOOTx fully charged, CLOAD = 10 nF
VCx – 0.2
–
–
–
V
V
High-Side Gate Drive Output
Low-Side Gate Drive Output
Gate Drive Pull-Up Resistance
Gate Drive Pull-Down Resistance
VGHx
IGHx < 10 μA
–
VSx + 0.3
VREG = 13 V, CLOAD = 10 nF
VREG – 0.2
–
–
0.3
12
–
V
VGLx
IGLx < 10 μA
–
6
–
V
TJ = 25°C, IGHx = –150 mA
RGHx(ON)UP
9
Ω
TJ = 125°C, IGHx = –150 mA
–
17
Ω
TJ = 25°C, IGLx = –150 mA
RGLx(ON)DN
2.4
–
3.5
5
4.6
–
Ω
TJ = 125°C, IGLx = –150 mA
Ω
GHx Passive Pull-Down
GLx Passive Pull-Down
RGHx(PPD) VGHx – VSx < 0.3 V
RGLx(PPD) VGLx – VLSS < 0.3 V
–
5000
5000
200
150
–
–
Ω
–
–
Ω
trGx
tfGx
20% to 80%, CLOAD = 10 nF
80% to 20%, CLOAD = 10 nF
–
–
ns
ns
ns
ns
ns
μs
Output Switching Time
–
–
TDEAD tied to GND
10
–
–
RTDEAD = 12 kΩ
RTDEAD = 64 kΩ
150
925
2.9
–
Time delay measured
from turn-off to turn-on
Dead Time
tDEAD
800
–
1050
–
RTDEAD = 220 kΩ
Logic I/O
VIN(H)
VIN(L)
IIN(H)
0.7 × VDD
–
–
–
V
V
Logic Input Voltage
BRAKEn, DIR, ENABLE, HA, HB, and HC pins
–
–
0.3 × VDD
VIN = high
10
0
–
1
μA
μA
V
Logic Input Current
IIN(L)
VIN = low, ENABLE = low
No fault present, ISINK = 1mA
ENABLE = low, SPEED = high
ENABLE = high, SPEED = low
–1
–
FAULT Output Voltage
VFAUlT
–
0.2
3
1
2
ms
ms
ENABLE and SPEED Sleep Timer
tSLEEP
1
2
3
Continued on the next page…
Allegro MicroSystems, LLC
115 Northeast Cutoff
5
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com