5秒后页面跳转
A42L2604V-45F PDF预览

A42L2604V-45F

更新时间: 2024-02-13 02:25:48
品牌 Logo 应用领域
联笙电子 - AMICC 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 330K
描述
EDO DRAM, 4MX4, 45ns, CMOS, PDSO24, TSOP2-26/24

A42L2604V-45F 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:TSOP2, TSOP24/26,.36Reach Compliance Code:unknown
风险等级:5.62访问模式:FAST PAGE
最长访问时间:45 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G24
长度:17.14 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP24/26,.36封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
认证状态:Not Qualified刷新周期:2048
座面最大高度:1.2 mm自我刷新:YES
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

A42L2604V-45F 数据手册

 浏览型号A42L2604V-45F的Datasheet PDF文件第1页浏览型号A42L2604V-45F的Datasheet PDF文件第3页浏览型号A42L2604V-45F的Datasheet PDF文件第4页浏览型号A42L2604V-45F的Datasheet PDF文件第5页浏览型号A42L2604V-45F的Datasheet PDF文件第6页浏览型号A42L2604V-45F的Datasheet PDF文件第7页 
A42L2604 Series  
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE  
Features  
Organization: 4,194,304 words X 4 bits  
Part Identification  
Industrial operating temperature range: -40°C to +85°C  
for -U  
- A42L2604 (2K Ref.)  
Single 3.3V power supply/built-in VBB generator  
Low power consumption  
- Operating: 80mA (-45 max)  
- Standby: 1.0mA (TTL), 1.5mA (CMOS),  
350µA (Self-refresh current)  
High speed  
Fast Page Mode with Extended Data Out  
2K Refresh Cycle in 32ms  
Read-modify-write, RAS -only, CAS -before- RAS ,  
Hidden refresh capability  
TTL-compatible, three-state I/O  
JEDEC standard packages  
- 300mil, 24/26-pin SOJ  
- 300mil, 24/26-pin TSOP type II package  
- 45/50 ns RAS access time  
- 20/22 ns column address access time  
- 12/13 ns CAS access time  
- 18/20 ns EDO Page Mode Cycle Time  
General Description  
The A42L2604 is a new generation randomly accessed  
memory for graphics, organized in a 4,194,304-word by 4-  
bit configuration. This product can execute Write and  
This allow random access of up to 2048(2K Ref.) words  
within a row at a 56/50 MHz EDO cycle, making the  
A42L2604 ideally suited for graphics, digital signal  
processing and high performance computing systems.  
Read operation via  
pin.  
CAS  
The A42L2604 offers an accelerated Fast Page Mode  
cycle with a feature called Extended Data Out (EDO).  
Pin Configuration  
Pin Descriptions  
SOJ  
TSOP  
Symbol  
A0 – A10  
I/O0 - I/O3  
Description  
Address Inputs (2K product)  
Data Input/Output  
26  
25  
24  
23  
22  
21  
26  
25  
24  
23  
22  
21  
VCC  
VCC  
1
2
3
VSS  
1
2
3
VSS  
I/O  
I/O  
0
1
I/O  
I/O  
0
1
I/O  
I/O  
3
2
I/O  
I/O  
3
2
WE  
RAS  
NC  
4
5
6
CAS  
OE  
A9  
WE  
RAS  
NC  
4
5
6
CAS  
OE  
A9  
Row Address Strobe  
RAS  
CAS  
WE  
Column Address Strobe  
Write Enable  
A10  
A0  
8
19  
18  
17  
16  
15  
14  
A8  
A10  
A0  
8
19  
18  
17  
16  
15  
14  
A8  
Output Enable  
9
A7  
9
A7  
OE  
VCC  
VSS  
NC  
A1  
10  
11  
12  
13  
A6  
A1  
10  
11  
12  
13  
A6  
3.3V Power Supply  
Ground  
A2  
A5  
A2  
A5  
A3  
A4  
A3  
A4  
VCC  
VSS  
VCC  
VSS  
No Connection  
(October, 2004, Version 1.2)  
1
AMIC Technology, Corp.  

与A42L2604V-45F相关器件

型号 品牌 描述 获取价格 数据表
A42L2604V-45U AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604V-45UF AMICC EDO DRAM, 4MX4, 45ns, CMOS, PDSO24, TSOP2-26/24

获取价格

A42L2604V-50 AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604V-50F AMICC EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

获取价格

A42L2604V-50U AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604V-50UF AMICC EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

获取价格