5秒后页面跳转
A42L0616V-50F PDF预览

A42L0616V-50F

更新时间: 2024-01-14 03:34:29
品牌 Logo 应用领域
联笙电子 - AMICC /
页数 文件大小 规格书
25页 273K
描述
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, TSOP2-50/44

A42L0616V-50F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSOP2-50/44Reach Compliance Code:unknown
风险等级:5.84访问模式:FAST PAGE
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44/50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
认证状态:Not Qualified刷新周期:1024
座面最大高度:1.2 mm自我刷新:YES
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.105 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

A42L0616V-50F 数据手册

 浏览型号A42L0616V-50F的Datasheet PDF文件第1页浏览型号A42L0616V-50F的Datasheet PDF文件第2页浏览型号A42L0616V-50F的Datasheet PDF文件第4页浏览型号A42L0616V-50F的Datasheet PDF文件第5页浏览型号A42L0616V-50F的Datasheet PDF文件第6页浏览型号A42L0616V-50F的Datasheet PDF文件第7页 
A42L0616 Series  
Selection Guide  
Symbol  
Description  
-45  
-50  
Unit  
tRAC  
45  
50  
ns  
Maximum RAS Access Time  
tAA  
Maximum Column Address Access Time  
Maximum CAS Access Time  
20  
12  
22  
13  
ns  
ns  
tCAC  
tOEA  
12  
13  
ns  
Maximum Output Enable ( OE) Access Time  
Minimum Read or Write Cycle Time  
Minimum EDO Cycle Time  
tRC  
tPC  
76  
18  
84  
20  
ns  
ns  
Functional Description  
The A42L0616 reads and writes data by multiplexing an  
20-bit address into a 10-bit row and 10-bit column address.  
The A42L0616 offers an accelerated Fast Page Mode  
cycle through a feature called Extended Data Out, which  
and  
are used to strobe the row address and the  
keeps the output drivers on during the  
precharge  
RAS  
CAS  
CAS  
column address, respectively.  
time (tcp). Since data can be output after  
goes high,  
CAS  
the user is not required to wait for valid data to appear  
before starting the next access cycle. Data-out will remain  
The A42L0616 has two  
CAS  
inputs:  
controls I/O0-  
LCAS  
valid as long as RAS and OE are low, and WE is high;  
this is the only characteristic which differentiates Extended  
Data Out operation from a standard Read or Fast Page  
Read.  
I/O7, and  
controls I/O8 - I/O15,  
and  
UCAS  
UCAS  
LCAS  
function in an identical manner to  
in that either will  
CAS  
generate an internal  
signal. The  
function and  
CAS  
CAS  
CAS  
timing are determined by the first  
(
or  
UCAS  
A memory cycle is terminated by returning both RAS and  
) to transition low and by the last to transition high.  
LCAS  
high. Memory cell data will retain its correct state by  
maintaining power and accessing all 1024(1K)  
combinations of the 10-bit row addresses, regardless of  
CAS  
Byte Read and Byte Write are controlled by using  
LCAS  
and  
separately.  
UCAS  
sequence, at least once every 16ms through any RAS  
A Read cycle is performed by holding the WE signal high  
during RAS/ operation. A Write cycle is executed by  
cycle (Read, Write) or RAS Refresh cycle ( RAS -only,  
CBR, or Hidden). The CBR Refresh cycle automatically  
controls the row addresses by invoking the refresh counter  
and controller.  
CAS  
holding the WE signal low during RAS /  
operation;  
CAS  
the input data is latched by the falling edge of WE or  
, whichever occurs later. The data inputs and outputs  
CAS  
are routed through 16 common I/O pins, with RAS,  
Power-On  
,
CAS  
The initial application of the VCC supply requires a 200 µs  
wait followed by a minimum of any eight initialization cycles  
WE and OE controlling the in direction.  
EDO Page Mode operation all 1024(1K) columns within a  
selected row to be randomly accessed at a high data rate.  
A EDO Page Mode cycle is initiated with a row address  
containing a RAS clock. During Power-On, the VCC  
current is dependent on the input levels of RAS and  
.
CAS  
It is recommended that RAS and  
track with VCC or  
CAS  
latched by RAS followed by a column address latched by  
be held at a valid VIH during Power-On to avoid current  
surges.  
. While holding RAS low,  
can be toggled to  
CAS  
CAS  
strobe changing column addresses, thus achieving shorter  
cycle times.  
PRELIMINARY  
(June, 2002, Version 0.2)  
2
AMIC Technology, Inc.  

与A42L0616V-50F相关器件

型号 品牌 描述 获取价格 数据表
A42L0616V-50U AMICC 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604 AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604S-45 AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604S-50 AMICC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格

A42L2604S-50F AMICC EDO DRAM, 4MX4, 50ns, CMOS, PDSO24

获取价格

A42L2604SERIES ETC 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

获取价格