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A3980KLPTR-T PDF预览

A3980KLPTR-T

更新时间: 2024-01-12 13:19:28
品牌 Logo 应用领域
急速微 - ALLEGRO 驱动器运动控制电子器件信号电路光电二极管电动机控制
页数 文件大小 规格书
18页 504K
描述
Automotive DMOS Microstepping Driver with Translator

A3980KLPTR-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TSSOP
包装说明:1.10 MM HEIGHT, LEAD FREE, MO-153AET, TSSOP-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:7.36
其他特性:ALSO REQUIRES 7V TO 50V VBB SUPPLY模拟集成电路 - 其他类型:STEPPER MOTOR CONTROLLER
JESD-30 代码:R-PDSO-G28JESD-609代码:e3
长度:9.7 mm湿度敏感等级:2
功能数量:1端子数量:28
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP28,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:3.3/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Motion Control Electronics最大供电电流 (Isup):12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:NMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm
Base Number Matches:1

A3980KLPTR-T 数据手册

 浏览型号A3980KLPTR-T的Datasheet PDF文件第2页浏览型号A3980KLPTR-T的Datasheet PDF文件第3页浏览型号A3980KLPTR-T的Datasheet PDF文件第4页浏览型号A3980KLPTR-T的Datasheet PDF文件第6页浏览型号A3980KLPTR-T的Datasheet PDF文件第7页浏览型号A3980KLPTR-T的Datasheet PDF文件第8页 
Automotive DMOS Microstepping Driver  
with Translator  
A3980  
ELECTRICAL CHARACTERISTICS (continued) at TJ = –40°C to +150ºC, VBB = 14 V, VDD = 3.0 to 5.5 V (unless otherwise noted)  
1
Characteristics  
Current Control  
Symbol  
Test Conditions  
Min.  
Max.  
Units  
Typ.  
Blank Time  
tBLANK  
tOFF  
RT = 56 K , CT = 680 pF  
RT = 56 K , CT = 680 pF  
700  
30  
950  
38  
1200  
46  
ns  
Fixed Off Time  
μs  
PFDH  
PFDL  
0.60 VDD  
0.21 VDD  
Mixed Decay Trip Points  
V
Crossover Dead Time  
tDT  
VREF  
IREF  
100  
0.8  
–3  
475  
800  
4
ns  
V
Recommended Reference Input Voltage  
Reference Input Current2  
0
3
μA  
2 V < VREF < 4 V, %ITripMAX = 38%  
2 V < VREF < 4 V, %ITripMAX = 70%  
2 V < VREF < 4 V, %ITripMAX = 100%  
±15  
±10  
±5  
Current Trip-Level Error3  
errI  
%
Thermal Protection  
Thermal Shutdown  
TSD  
160  
170  
15  
180  
ºC  
ºC  
Thermal Shutdown Hysteresis  
TSDH  
Diagnostics  
Max VDS on High-Side Bridge FETs  
Max VDS on Low-Side Bridge FETs  
VDSHT  
VDSLT  
tSCT  
Sampled after tBLANK + tSCT  
Sampled after tBLANK + tSCT  
1.5  
1.5  
700  
35  
V
V
32  
36  
V
DS Fault Measurement Delay  
ns  
Minimum Load Current  
VBB Overvoltage Lockout  
IOC  
w.r.t. ITRIPMAX at Home position  
%
V
VOVB  
VOVBH  
VUVR  
VUVD  
VUVDH  
VBB rising  
34  
V
V
BB Overvoltage Lockout Hysteresis  
REG Undervoltage Lockout  
2
4
V
VREG falling  
5.3  
2.45  
50  
5.7  
2.7  
100  
6.0  
2.95  
V
VDD Enable Threshold  
VDD rising  
V
VDD Enable Threshold Hysteresis  
mV  
1
Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary  
for individual units, within the specied maximum and minimum limits.  
2
Negative current is dened as coming out of (sourcing from) the specied device pin.  
3errI = (ITrip – IProg) IProg, where IProg = %ITripMAX ITripMAX  
.
×
Allegro MicroSystems, Inc.  
5
115 Northeast Cutoff, Box 15036  
Worcester, Massachusetts 01615-0036 (508) 853-5000  
www.allegromicro.com  

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