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A2C25S12M3-F PDF预览

A2C25S12M3-F

更新时间: 2023-12-20 18:44:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管二极管
页数 文件大小 规格书
18页 1211K
描述
ACEPACK 2整流逆变制动1200 V、25 A沟槽栅场截止IGBT M系列,软二极管和NTC

A2C25S12M3-F 数据手册

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A2C25S12M3-F  
Brake stage  
Symbol  
Parameter  
Turn-on delay time  
Test conditions  
Min.  
Typ.  
109  
15.3  
0.97  
109  
132  
1.36  
109  
16.2  
1.49  
122  
216  
1.85  
Max.  
Unit  
ns  
t
d(on)  
V
= 600 V, I = 25 A,  
CC  
C
t
Current rise time  
ns  
R
= 15 Ω, V = ±15 V,  
r
G
GE  
(1)  
E
di/dt = 1290 A/µs  
Turn-on switching energy  
Turn-off delay time  
Current fall time  
mJ  
ns  
on  
t
d(off)  
V
= 600 V, I = 25 A,  
CC  
C
t
ns  
R
= 15 Ω, V = ±15 V,  
f
G
GE  
(2)  
E
dv/dt = 9600 V/µs  
Turn-off switching energy  
Turn-on delay time  
Current rise time  
mJ  
ns  
off  
t
d(on)  
V
= 600 V, I = 25 A,  
CC  
C
t
R
= 15 Ω, V = ±15 V,  
ns  
r
G
GE  
(1)  
E
di/dt = 1274 A/µs, T = 150 °C  
J
Turn-on switching energy  
Turn-off delay time  
Current fall time  
mJ  
ns  
on  
t
d(off)  
V
= 600 V, I = 25 A,  
CC  
C
t
R
= 15 Ω, V = ±15 V,  
ns  
f
G
GE  
(2)  
E
dv/dt = 8200 V/µs, T = 150 °C  
J
Turn-off switching energy  
mJ  
off  
V
≤ 600 V, V 15 V,  
GE  
CC  
t
Short-circuit withstand time  
10  
µs  
SC  
T
Jstart  
≤ 150 °C  
Thermal resistance junction-to-  
case  
R
Each IGBT  
0.69  
0.79  
0.76  
°C/W  
°C/W  
THj-c  
Thermal resistance case-to-  
heatsink  
R
THc-h  
Each IGBT, λ  
= 1 W/(m·°C)  
grease  
1. Including the reverse recovery of the diode.  
2. Including the tail of the collector current.  
1.2.2  
Diode  
Table 7. Absolute maximum ratings of the diode, brake stage  
Symbol  
Parameter  
Value  
1200  
25  
Unit  
V
V
Repetitive peak reverse voltage  
RRM  
I
Continuous forward current (T = 100 °C)  
A
F
C
(1)  
Pulsed forward current (t = 1 ms)  
I
FP  
50  
A
p
T
Maximum junction temperature  
175  
°C  
°C  
JMAX  
T
Operating junction temperature range under switching conditions  
-40 to 150  
Jop  
1. Pulse width limited by maximum junction temperature.  
Table 8. Electrical characteristics of the diode, brake stage  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
2.95  
2.3  
Max.  
Unit  
I = 25 A  
-
-
-
-
-
-
V
F
F
Forward voltage  
V
(terminal)  
I = 25 A, T = 150 ˚C  
F J  
t
rr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
Reverse recovery energy  
190  
1.53  
29  
ns  
µC  
A
Q
I = 25 A, V = 600 V,  
rr  
F
R
V
= ±15 V, di/dt = 1290 A/μs  
I
GE  
rrm  
E
0.74  
mJ  
rec  
DS12321 - Rev 3  
page 5/18  
 
 
 
 

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