A2C25S12M3-F
Brake stage
Symbol
Parameter
Turn-on delay time
Test conditions
Min.
Typ.
109
15.3
0.97
109
132
1.36
109
16.2
1.49
122
216
1.85
Max.
Unit
ns
t
d(on)
V
= 600 V, I = 25 A,
CC
C
t
Current rise time
ns
R
= 15 Ω, V = ±15 V,
r
G
GE
(1)
E
di/dt = 1290 A/µs
Turn-on switching energy
Turn-off delay time
Current fall time
mJ
ns
on
t
d(off)
V
= 600 V, I = 25 A,
CC
C
t
ns
R
= 15 Ω, V = ±15 V,
f
G
GE
(2)
E
dv/dt = 9600 V/µs
Turn-off switching energy
Turn-on delay time
Current rise time
mJ
ns
off
t
d(on)
V
= 600 V, I = 25 A,
CC
C
t
R
= 15 Ω, V = ±15 V,
ns
r
G
GE
(1)
E
di/dt = 1274 A/µs, T = 150 °C
J
Turn-on switching energy
Turn-off delay time
Current fall time
mJ
ns
on
t
d(off)
V
= 600 V, I = 25 A,
CC
C
t
R
= 15 Ω, V = ±15 V,
ns
f
G
GE
(2)
E
dv/dt = 8200 V/µs, T = 150 °C
J
Turn-off switching energy
mJ
off
V
≤ 600 V, V ≤ 15 V,
GE
CC
t
Short-circuit withstand time
10
µs
SC
T
Jstart
≤ 150 °C
Thermal resistance junction-to-
case
R
Each IGBT
0.69
0.79
0.76
°C/W
°C/W
THj-c
Thermal resistance case-to-
heatsink
R
THc-h
Each IGBT, λ
= 1 W/(m·°C)
grease
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
1.2.2
Diode
Table 7. Absolute maximum ratings of the diode, brake stage
Symbol
Parameter
Value
1200
25
Unit
V
V
Repetitive peak reverse voltage
RRM
I
Continuous forward current (T = 100 °C)
A
F
C
(1)
Pulsed forward current (t = 1 ms)
I
FP
50
A
p
T
Maximum junction temperature
175
°C
°C
JMAX
T
Operating junction temperature range under switching conditions
-40 to 150
Jop
1. Pulse width limited by maximum junction temperature.
Table 8. Electrical characteristics of the diode, brake stage
Symbol
Parameter
Test conditions
Min.
Typ.
2.95
2.3
Max.
Unit
I = 25 A
-
-
-
-
-
-
V
F
F
Forward voltage
V
(terminal)
I = 25 A, T = 150 ˚C
F J
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
190
1.53
29
ns
µC
A
Q
I = 25 A, V = 600 V,
rr
F
R
V
= ±15 V, di/dt = 1290 A/μs
I
GE
rrm
E
0.74
mJ
rec
DS12321 - Rev 3
page 5/18