Datasheet > A2C25S12M3-F

A2C25S12M3-F

更新时间： 2023-12-20 18:44:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管二极管
页数	文件大小	规格书
18页	1211K
描述
ACEPACK 2整流逆变制动1200 V、25 A沟槽栅场截止IGBT M系列，软二极管和NTC

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A2C25S12M3-F 数据手册

A2C25S12M3-F

Electrical ratings

1.1

Inverter stage

Limiting values at T_J= 25 °C, unless otherwise specified.

1.1.1

IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol

Description

Value

1200

Unit

Collector-emitter voltage (V = 0 V)

CES

Continuous collector current (T = 100 °C)

(1)

Pulsed collector current (t = 1 ms)

Gate-emitter voltage

±20

Total power dissipation of each IGBT (T = 25 °C, T = 175 °C)

197

°C

TOT

Maximum junction temperature

Operating junction temperature range under switching conditions

175

JMAX

-40 to 150

Jop

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Collector-emitter breakdown

voltage

I = 1 mA, V = 0 V

C GE

1200

(BR)CES

= 15 V, I = 25 A

1.95

2.3

2.45

Collector-emitter saturation

voltage

CE(sat)

(terminal)

= 15 V, I = 25 A, T = 150 ˚C

= V , I = 1 mA

Gate threshold voltage

Collector cut-off current

Gate-emitter leakage current

Input capacitance

GE(th)

= 0 V, V = 1200 V

100

±500

μA

CES

= 0 V, V = ±20 V

GES

1550

130

ies

= 25 V, f = 1 MHz, V = 0 V

Output capacitance

oes

Reverse transfer capacitance

res

= 960 V, I = 25 A,

Total gate charge

= ±15 V

Turn-on delay time

Current rise time

109

15.3

0.97

d(on)

= 600 V, I = 25 A,

= 15 Ω, V = ±15 V,

(1)

di/dt = 1290 A/µs

Turn-on switching energy

DS12321 - Rev 3

page 2/18

123 4 5 6 7...18

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