Datasheet > A2C25S12M3-F

A2C25S12M3-F

更新时间： 2023-12-20 18:44:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管二极管
页数	文件大小	规格书
18页	1211K
描述
ACEPACK 2整流逆变制动1200 V、25 A沟槽栅场截止IGBT M系列，软二极管和NTC

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A2C25S12M3-F 数据手册

A2C25S12M3-F

Inverter stage

Symbol

Parameter

Turn-off delay time

Test conditions

Min.

Typ.

109

132

1.36

109

16.2

1.49

122

216

1.85

Max.

Unit

d(off)

= 600 V, I = 25 A,

Current fall time

= 15 Ω, V = ±15 V,

(2)

dv/dt = 9600 V/µs

Turn-off switching energy

Turn-on delay time

Current rise time

off

d(on)

= 600 V, I = 25 A,

= 15 Ω, V = ±15 V,

(1)

di/dt = 1274 A/µs, T = 150 °C

Turn-on switching energy

Turn-off delay time

Current fall time

d(off)

= 600 V, I = 25 A,

= 15 Ω, V = ±15 V,

(2)

dv/dt = 8200 V/µs, T = 150 °C

Turn-off switching energy

off

≤ 600 V, V ≤ 15 V,

Short-circuit withstand time

µs

≤ 150 °C

Jstart

Thermal resistance junction-to-

case

Each IGBT

0.69

0.79

0.76

°C/W

THj-c

Thermal resistance case-to-

heatsink

THc-h

Each IGBT, λ

= 1 W/(m·°C)

grease

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.1.2

Diode

Limiting values at T_J= 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol

Parameter

Repetitive peak reverse voltage

Value

1200

Unit

RRM

Continuous forward current (T = 100 °C)

(1)

Pulsed forward current (t = 1 ms)

Maximum junction temperature

175

°C

JMAX

Operating junction temperature range under switching conditions

-40 to 150

Jop

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode, inverter stage

Symbol

Parameter

Test conditions

Min.

Typ.

2.95

2.3

Max.

Unit

I = 25 A

4.1

Forward voltage

(terminal)

I = 25 A, T = 150 ˚C

F J

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery energy

190

1.53

µC

I = 25 A, V = 600 V,

= ±15 V, di /dt = 1290 A/μs

rrm

0.74

rec

DS12321 - Rev 3

page 3/18

1 234 5 6 7...18

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