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A29L004AUL-70F PDF预览

A29L004AUL-70F

更新时间: 2024-01-14 16:55:16
品牌 Logo 应用领域
联笙电子 - AMICC 闪存存储内存集成电路
页数 文件大小 规格书
39页 529K
描述
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory

A29L004AUL-70F 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:QCCJ, LDCC32,.5X.6Reach Compliance Code:unknown
风险等级:5.8Is Samacsys:N
最长访问时间:70 ns启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8部门数/规模:1,2,1,7
端子数量:32字数:524288 words
字数代码:512000最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.03 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
类型:NOR TYPEBase Number Matches:1

A29L004AUL-70F 数据手册

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A29L004A Series  
Requirements for Reading Array Data  
The device enters the CMOS standby mode when the  
&
CE  
pins (  
only on 32-pin PLCC & (s)TSOP  
CE  
packages) are both held at VCC ± 0.3V. (Note that this is a  
more restricted voltage range than VIH.) If and  
RESET  
To read array data from the outputs, the system must drive the  
and  
pins to VIL.  
is the power control and selects  
CE  
OE  
OE  
the output pins.  
CE  
is the output control and gates array data to  
should remain at VIH all the time during  
CE  
RESET  
the device.  
(N/A on 32-pin PLCC & (s)TSOP packages) are held at VIH,  
but not within VCC ± 0.3V, the device will be in the standby  
mode, but the standby current will be greater. The device  
requires the standard access time (tCE) before it is ready to  
read data.  
If the device is deselected during erasure or programming, the  
device draws active current until the operation is completed.  
ICC3 and ICC4 in the DC Characteristics tables represent the  
standby current specification.  
WE  
read operation. The internal state machine is set for reading  
array data upon device power-up, or after a hardware reset.  
This ensures that no spurious alteration of the memory content  
occurs during the power transition. No command is necessary  
in this mode to obtain array data. Standard microprocessor  
read cycles that assert valid addresses on the device address  
inputs produce valid data on the device data outputs. The  
device remains enabled for read access until the command  
register contents are altered.  
Automatic Sleep Mode  
See "Reading Array Data" for more information. Refer to the  
AC Read Operations table for timing specifications and to the  
Read Operations Timings diagram for the timing waveforms,  
lCC1 in the DC Characteristics table represents the active  
current specification for reading array data.  
The automatic sleep mode minimizes Flash device energy  
consumption. The device automatically enables this mode  
when addresses remain stable for tACC +30ns. The automatic  
sleep mode is independent of the  
,
and  
control  
OE  
WE  
CE  
signals. Standard address access timings provide new data  
when addresses are changed. While in sleep mode, output  
data is latched and always available to the system. ICC4 in the  
DC Characteristics table represents the automatic sleep mode  
current specification.  
Writing Commands/Command Sequences  
To write a command or command sequence (which includes  
programming data to the device and erasing sectors of  
memory), the system must drive  
and  
to VIL, and  
CE  
WE  
Output Disable Mode  
to VIH. The device features an Unlock Bypass mode to  
OE  
facilitate faster programming. Once the device enters the  
Unlock Bypass mode, only two write cycles are required to  
program a byte, instead of four.  
The “Byte Program Command Sequence” section has details  
on programming data to the device using both standard and  
Unlock Bypass command sequence. An erase operation can  
erase one sector, multiple sectors, or the entire device. The  
Sector Address Tables indicate the address range that each  
sector occupies. A "sector address" consists of the address  
inputs required to uniquely  
When the  
input is at VIH, output from the device is  
OE  
disabled. The output pins are placed in the high impedance  
state.  
: Hardware Reset Pin (N/A on 32-pin PLCC &  
RESET  
(s)TSOP packages)  
The pin provides a hardware method of resetting the  
RESET  
device to reading array data. When the system drives the  
pin low for at least a period of tRP, the device  
RESET  
select a sector. See the "Command Definitions" section for  
immediately terminates any operation in progress, tristates all  
data output pins, and ignores all read/write attempts for the  
duration of the  
details on erasing  
a
sector or the entire chip, or  
suspending/resuming the erase operation.  
pulse. The device also resets the  
RESET  
After the system writes the autoselect command sequence,  
the device enters the autoselect mode. The system can then  
read autoselect codes from the internal register (which is  
separate from the memory array) on I/O7 - I/O0. Standard read  
cycle timings apply in this mode. Refer to the "Autoselect  
Mode" and "Autoselect Command Sequence" sections for  
more information.  
ICC2 in the DC Characteristics table represents the active  
current specification for the write mode. The "AC  
Characteristics" section contains timing specification tables  
and timing diagrams for write operations.  
internal state machine to reading array data. The operation  
that was interrupted should be reinitiated once the device is  
ready to accept another command sequence, to ensure data  
integrity.  
Current is reduced for the duration of the  
pulse.  
RESET  
When  
is held at VSS ± 0.3V, the device draws CMOS  
RESET  
standby current (ICC4 ). If  
is held at VIL but not within  
RESET  
VSS ± 0.3V, the standby current will be greater.  
The pin may be tied to the system reset circuitry. A  
RESET  
system reset would thus also reset the Flash memory,  
enabling the system to read the boot-up firmware from the  
Flash memory.  
Program and Erase Operation Status  
If  
is asserted during a program or erase operation,  
RESET  
the RY/  
During an erase or program operation, the system may check  
the status of the operation by reading the status bits on I/O7 -  
I/O0. Standard read cycle timings and ICC read specifications  
apply. Refer to "Write Operation Status" for more information,  
and to each AC Characteristics section for timing diagrams.  
pin remains a “0” (busy) until the internal reset  
BY  
operation is complete, which requires a time tREADY (during  
Embedded Algorithms). The system can thus monitor RY/  
BY  
to determine whether the reset operation is complete. If  
is asserted when a program or erase operation is not  
Standby Mode  
RESET  
executing (RY/  
pin is “1”), the reset operation is completed  
BY  
within a time of tREADY (not during Embedded Algorithms). The  
system can read data tRH after the pin return to VIH.  
When the system is not reading or writing to the device, it can  
place the device in the standby mode. In this mode, current  
consumption is greatly reduced, and the outputs are placed in  
RESET  
Refer to the AC Characteristics tables for  
and diagram.  
parameters  
RESET  
the high impedance state, independent of the  
input.  
OE  
PRELIMINARY (March, 2005, Version 0.0)  
5
AMIC Technology, Corp.  

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