Datasheet > A29DL164UV-120

A29DL164UV-120

更新时间： 2022-11-26 00:51:33

品牌	Logo	应用领域
联笙电子 - AMICC		闪存
页数	文件大小	规格书
47页	738K
描述
16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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A29DL164UV-120 数据手册

A29DL16x Series

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Sector Erase Time

Typ. (Note 1)

Max. (Note 2)

Unit

sec

µs

Comments

0.7

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

Byte Programming Time

150

210

120

Word Programming Time

Accelerated Word/Byte Programming Time

µs

Excludes system-level

overhead (Note 5)

µs

Chip Programming Time

(Note 3)

Byte Mode

Word Mode

sec

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycles. Additionally, programming

typically assumes checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum byte program time listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12

for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 10,000 cycles.

LATCH-UP CHARACTERISTICS

Description

Min.

-1.0V

Max.

VCC+1.0V

+100 mA

12.5V

Input Voltage with respect to VSS on all I/O pins

VCC Current

-100 mA

-1.0V

Input voltage with respect to VSS on all pins except I/O pins

(including A9,

and

)

RESET

Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time.

PACKAGE AND PIN CAPACITANCE

Parameter Symbol

Parameter Description

Test Setup

Typ.

Max.

Unit

TSOP

BGA

7.5

CIN

Input Capacitance

V^IN=0

4.2

8.5

5.4

7.5

3.9

TSOP

BGA

6.5

COUT

Output Capacitance

V^OUT=0

V^IN=0

TSOP

BGA

CIN2

Control Pin Capacitance

4.7

Notes:

1. Sampled, not 100% tested.

2. Test conditions T^A= 25°C, f = 1.0MHz

DATA RETENTION

Parameter

Test Conditions

150°C

Min

Unit

Years

Minimum Pattern Data Retention Time

125°C

PRELIMINARY (September, 2004, Version 0.0)

AMIC Technology, Corp.

1...40 41 424344 45 46 47

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