A29001/290011 Series
128K X 8 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Features
ꢀTypical 100,000 program/erase cycles per sector
ꢀ20-year data retention at 125°C
- Reliable operation for the life of the system
ꢀCompatible with JEDEC-standards
ꢀ5.0V ± 10% for read and write operations
ꢀAccess times:
- 55/70/90 (max.)
ꢀCurrent:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical CMOS standby
- Pinout and software compatible with single-power-
supply Flash memory standard
- Superior inadvertent write protection
ꢀFlexible sector architecture
ꢀ
Polling and toggle bits
Data
- 8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Provides a software method of detecting completion
of program or erase operations
ꢀErase Suspend/Erase Resume
- Sector protection:
- Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector, then
resumes the erase operation
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
ꢀHardware reset pin (
)
RESET
ꢀTop or bottom boot block configurations available
ꢀEmbedded Erase Algorithms
- Hardware method to reset the device to reading array
data (not available on A290011)
ꢀIndustrial operating temperature range: -40°C to +85°C
for – U
ꢀPackage options: 32-pin P-DIP, PLCC, TSOP or
sTSOP (Forward type)
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses
General Description
The A29001 is a 5.0 volt-only Flash memory organized as
131,072 bytes of 8 bits each. The A29001 offers the
The A29001 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the
programming and erase operations. Reading data out of
the device is similar to reading from other Flash or EPROM
devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times
the program pulse widths and verifies proper program
margin.
function, but it is not available on A290011. The
RESET
128 Kbytes of data are further divided into seven sectors for
flexible sector erase capability. The 8 bits of data appear on
I/O0 - I/O7 while the addresses are input on A0 to A16. The
A29001 is offered in 32-pin PLCC, TSOP, sTSOP and PDIP
packages. This device is designed to be programmed in-
system with the standard system 5.0 volt VCC supply.
Additional 12.0 volt VPP is not required for in-system write
or erase operations. However, the A29001 can also be
programmed in standard EPROM programmers.
The A29001 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it
is in the Erase Suspend. Besides the I/O6 toggle bit, the
A29001 has a second toggle bit, I/O2, to indicate whether
the addressed sector is being selected for erase. The
A29001 also offers the ability to program in the Erase
Suspend mode. The standard A29001 offers access times
of 55, 70 and 90 ns allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention the
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm
- an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin.
device has separate chip enable (
), write enable (
)
WE
CE
and output enable (
) controls.
OE
The host system can detect whether a program or erase
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
operation is complete by reading the I/O7 (
Polling)
Data
and I/O6 (toggle) status bits. After a program or erase
cycle has been completed, the device is ready to read
array data or accept another command.
(December, 2004, Version 1.3)
1
AMIC Technology, Corp.
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