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A290011TY-70F PDF预览

A290011TY-70F

更新时间: 2024-01-26 23:20:21
品牌 Logo 应用领域
联笙电子 - AMICC 光电二极管内存集成电路
页数 文件大小 规格书
39页 441K
描述
Flash, 128KX8, 70ns, PDSO32, 8 X 14 MM, LEAD FREE, STSOP1-32

A290011TY-70F 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TSOP1包装说明:8 X 14 MM, LEAD FREE, STSOP1-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.54最长访问时间:70 ns
其他特性:TOP BOOT SECTOR启动块:TOP
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G32长度:12.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,3端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:8K,4K,16K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

A290011TY-70F 数据手册

 浏览型号A290011TY-70F的Datasheet PDF文件第3页浏览型号A290011TY-70F的Datasheet PDF文件第4页浏览型号A290011TY-70F的Datasheet PDF文件第5页浏览型号A290011TY-70F的Datasheet PDF文件第7页浏览型号A290011TY-70F的Datasheet PDF文件第8页浏览型号A290011TY-70F的Datasheet PDF文件第9页 
A29001/A290011 Series  
Standby Mode  
Requirements for Reading Array Data  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode,  
current consumption is greatly reduced, and the outputs  
are placed in the high impedance state, independent of the  
To read array data from the outputs, the system must drive  
the  
and  
pins to VIL.  
is the power control and  
CE  
OE  
CE  
selects the device.  
is the output control and gates  
OE  
array data to the output pins.  
should remain at VIH all  
WE  
input.  
OE  
the time during read operation. The internal state machine  
is set for reading array data upon device power-up, or after  
a hardware reset. This ensures that no spurious alteration  
of the memory content occurs during the power transition.  
No command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that assert  
valid addresses on the device address inputs produce valid  
data on the device data outputs. The device remains  
enabled for read access until the command register  
contents are altered.  
See "Reading Array Data" for more information. Refer to  
the AC Read Operations table for timing specifications and  
to the Read Operations Timings diagram for the timing  
waveforms, lCC1 in the DC Characteristics table represents  
the active current specification for reading array data.  
The device enters the CMOS standby mode when the  
CE  
only on A290011) are both held at  
&
pins (  
CE  
RESET  
VCC ± 0.5V. (Note that this is a more restricted voltage  
range than VIH.) The device enters the TTL standby mode  
when  
is held at VIH, while  
(Not available on  
RESET  
CE  
A290011) is held at VCC±0.5V. The device requires the  
standard access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is  
completed.  
ICC3 in the DC Characteristics tables represents the  
standby current specification.  
Output Disable Mode  
Writing Commands/Command Sequences  
When the  
input is at VIH, output from the device is  
OE  
disabled. The output pins are placed in the high impedance  
state.  
To write a command or command sequence (which  
includes programming data to the device and erasing  
sectors of memory), the system must drive  
and  
CE  
WE  
: Hardware Reset Pin (N/A on A290011)  
RESET  
to VIL, and  
to VIH. An erase operation can erase one  
OE  
The  
pin provides a hardware method of resetting  
RESET  
the device to reading array data. When the system drives  
the pin low for at least a period of tRP, the device  
sector, multiple sectors, or the entire device. The Sector  
Address Tables indicate the address range that each  
sector occupies. A "sector address" consists of the address  
inputs required to uniquely select a sector. See the  
"Command Definitions" section for details on erasing a  
sector or the entire chip, or suspending/resuming the erase  
operation.  
After the system writes the autoselect command sequence,  
the device enters the autoselect mode. The system can  
then read autoselect codes from the internal register  
(which is separate from the memory array) on I/O7 - I/O0.  
Standard read cycle timings apply in this mode. Refer to  
the "Autoselect Mode" and "Autoselect Command  
Sequence" sections for more information.  
RESET  
immediately terminates any operation in progress, tristates  
all data output pins, and ignores all read/write attempts for  
the duration of the  
the internal state machine to reading array data. The  
operation that was interrupted should be reinitiated once  
the device is ready to accept another command sequence,  
to ensure data integrity.  
pulse. The device also resets  
RESET  
The  
pin may be tied to the system reset circuitry.  
RESET  
A system reset would thus also reset the Flash memory,  
enabling the system to read the boot-up firmware from the  
Flash memory.  
Refer to the AC Characteristics tables for  
parameters and diagram.  
ICC2 in the Characteristics table represents the active  
current specification for the write mode. The "AC  
Characteristics" section contains timing specification tables  
and timing diagrams for write operations.  
RESET  
Program and Erase Operation Status  
During an erase or program operation, the system may  
check the status of the operation by reading the status bits  
on I/O7 - I/O0. Standard read cycle timings and ICC read  
specifications apply. Refer to "Write Operation Status" for  
more information, and to each AC Characteristics section  
for timing diagrams.  
(May, 2012, Version 1.7)  
5
AMIC Technology, Corp.  

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