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A290011BUL-55UF PDF预览

A290011BUL-55UF

更新时间: 2022-12-29 20:28:04
品牌 Logo 应用领域
联笙电子 - AMICC /
页数 文件大小 规格书
33页 387K
描述
128K X 8 Bit CMOS 5.0 Volt-only,Boot Sector Flash Memory

A290011BUL-55UF 数据手册

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A29001B/A290011B Series  
128K X 8 Bit CMOS 5.0 Volt-only,  
Boot Sector Flash Memory  
Preliminary  
Features  
„ Minimum 100,000 program/erase cycles per sector  
„ 20-year data retention at 125ºC  
„ 5.0V ± 10% for read and write operations  
„ Access time:  
- Reliable operation for the life of the system  
„ Compatible with JEDEC-standards  
- 55ns (max.)  
„ Current:  
- Pinout and software compatible with single-power-  
supply Flash memory standard  
- Superior inadvertent write protection  
- 20mA typical active read current  
- 30mA typical program/erase current  
- 6μA typical CMOS standby  
„ Flexible sector architecture  
„
Polling and toggle bits  
Data  
- 8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors  
- Any combination of sectors can be erased  
- Supports full chip erase  
- Provides a software method of detecting completion  
of program or erase operations  
„ Erase Suspend/Erase Resume  
- Sector protection:  
- Suspends a sector erase operation to read data from,  
or program data to, a non-erasing sector, then  
resumes the erase operation  
A hardware method of protecting sectors to prevent  
any inadvertent program or erase operations within  
that sector  
„ Hardware reset pin (  
)
RESET  
„ Top or bottom boot block configurations available  
„ Embedded Erase Algorithms  
- Hardware method to reset the device to reading array  
data (not available on A290011B)  
„ Industrial operating temperature range: -40°C to +85°C  
for – U  
„ Package options  
- Embedded Erase algorithm will automatically erase  
the entire chip or any combination of designated  
sectors and verify the erased sectors  
- Embedded Program algorithm automatically writes  
and verifies bytes at specified addresses  
- 32-pin P-DIP, PLCC or TSOP  
- All Pb-free (Lead-free) products are RoHS2.0 compliant  
General Description  
The A29001B is a 5.0 volt-only Flash memory organized as  
131,072 bytes of 8 bits each. The A29001B offers the  
The A29001B is entirely software command set compatible  
with the JEDEC single-power-supply Flash standard.  
Commands are written to the command register using  
standard microprocessor write timings. Register contents  
serve as input to an internal state-machine that controls the  
erase and programming circuitry. Write cycles also  
internally latch addresses and data needed for the  
programming and erase operations. Reading data out of  
the device is similar to reading from other Flash or EPROM  
devices.  
Device programming occurs by writing the proper program  
command sequence. This initiates the Embedded Program  
algorithm - an internal algorithm that automatically times  
the program pulse widths and verifies proper program  
margin.  
function, but it is not available on A290011B. The  
RESET  
128 Kbytes of data are further divided into seven sectors for  
flexible sector erase capability. The 8 bits of data appear on  
I/O0 - I/O7 while the addresses are input on A0 to A16. The  
A29001B is offered in 32-pin PLCC, PDIP and TSOP  
packages. This device is designed to be programmed in-  
system with the standard system 5.0 volt VCC supply.  
Additional 12.0 volt VPP is not required for in-system write  
or erase operations. However, the A29001B can also be  
programmed in standard EPROM programmers.  
The A29001B has the first toggle bit, I/O6, which indicates  
whether an Embedded Program or Erase is in progress, or it  
is in the Erase Suspend. Besides the I/O6 toggle bit, the  
A29001B has a second toggle bit, I/O2, to indicate whether  
the addressed sector is being selected for erase. The  
A29001B also offers the ability to program in the Erase  
Suspend mode. The standard A29001B offers access time  
of 55ns allowing high-speed microprocessors to operate  
without wait states. To eliminate bus contention the device  
Device erasure occurs by executing the proper erase  
command sequence. This initiates the Embedded Erase  
algorithm  
- an internal algorithm that automatically  
preprograms the array (if it is not already programmed)  
before executing the erase operation. During erase, the  
device automatically times the erase pulse widths and  
verifies proper erase margin.  
has separate chip enable (  
), write enable (  
) and  
WE  
CE  
) controls.  
output enable (  
OE  
The host system can detect whether a program or erase  
The device requires only a single 5.0 volt power supply for  
both read and write functions. Internally generated and  
regulated voltages are provided for the program and erase  
operations.  
operation is complete by reading the I/O7 (  
Polling)  
Data  
and I/O6 (toggle) status bits. After a program or erase cycle  
has been completed, the device is ready to read array data  
or accept another command.  
PRELIMINARY (June, 2016, Version 0.0)  
1
AMIC Technology, Corp.  

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