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A1225XL-2PQ100I PDF预览

A1225XL-2PQ100I

更新时间: 2024-01-07 09:46:05
品牌 Logo 应用领域
美高森美 - MICROSEMI 时钟可编程逻辑
页数 文件大小 规格书
84页 4582K
描述
Field Programmable Gate Array, 200MHz, 451-Cell, CMOS, PQFP100,

A1225XL-2PQ100I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, QFP-100Reach Compliance Code:compliant
风险等级:5.81其他特性:MAX 83 I/OS
最大时钟频率:225 MHzCLB-Max的组合延迟:2.6 ns
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm湿度敏感等级:3
可配置逻辑块数量:451等效关口数量:2500
输入次数:83逻辑单元数量:451
输出次数:83端子数量:100
最高工作温度:85 °C最低工作温度:-40 °C
组织:451 CLBS, 2500 GATES封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP100,.7X.9
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):225电源:5 V
可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY认证状态:Not Qualified
座面最大高度:3.4 mm子类别:Field Programmable Gate Arrays
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm

A1225XL-2PQ100I 数据手册

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Integrator Series FPGAs: 1200XL and 3200DX Families  
3200DX devices contain a third type of logic module,  
D-modules, which are arranged around the periphery of the  
device. D-modules contain wide-decode circuitry which  
provides a fast, wide-input AND function similar to that  
found in product term architectures (Figure 3). The  
D-module allows 3200DX devices to perform wide-decode  
functions at speeds comparable CPLDs and PAL devices.  
The output of the D-module has a programmable inverter  
for active HIGH or LOW assertion. The D-module output is  
hard-wired to an output pin or can be fed back into the  
array to be incorporated into other logic.  
modules can be cascaded together to form memory spaces  
of user-definable width and depth. A block diagram of the  
3200DX dual-port SRAM block is shown in Figure 4.  
7 Inputs  
Hard-Wire to I/O  
Programmable  
Inverter  
Dual-Port SRAM Modules  
Several 3200DX devices contain dual-port SRAM modules  
that have been optimized for synchronous or asynchronous  
applications. The SRAM modules are arranged in 256-bit  
blocks which can be configured as 32x8 or 64x4 (refer to  
“Integrator Series Product Profile Family” on page 1 for the  
number of SRAM blocks within a particular device). SRAM  
Feedback to Array  
Figure 3 D-Module Implementation  
WD[7:0]  
Latches  
[7:0]  
[5:0]  
RDAD[5:0]  
SRAM Module  
32 x 8 or 64 x 4  
Latches  
Read  
Port  
Logic  
Write  
Port  
Logic  
(256 Bits)  
WRAD[5:0]  
[5:0]  
Read  
Logic  
Latches  
REN  
RCLK  
MODE  
BLKEN  
WEN  
RD[7:0]  
Write  
Logic  
Routing Tracks  
WCLK  
Figure 4 3200DX Dual-Port SRAM Block  
The 3200DX SRAM modules are true dual-port structures  
containing independent READ and WRITE ports. Each  
SRAM module contains six bits of read and write addressing  
(RDAD[5:0] and WRAD[5:0], respectively) for 64x4 bit  
blocks. When configured in byte mode, the highest order  
address bits (RDAD5 and WRAD5) are not used. The read  
and write ports of the SRAM block contain independent  
clocks (RCLK and WCLK) with programmable polarities  
offering active HIGH or LOW implementation. The SRAM  
block contains eight data inputs (WD[7:0]) and eight  
outputs (RD[7:0]) which are connected to segmented  
vertical routing tracks.  
The 3200DX dual-port SRAM blocks provide an optimal  
solution for high-speed buffered applications requiring fast  
FIFO and LIFO queues. Actel’s ACTgen Macro Builder  
provides the capability to quickly design memory functions,  
Discontinued – v3.0  
7

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