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A1120EUA-T

更新时间： 2024-01-10 11:43:50
品牌 Logo 应用领域
急速微 - ALLEGRO 开关传感器换能器磁场传感器输出元件信息通信管理
页数 文件大小 规格书
9页 230K
描述
Chopper Stabilized Precision Hall Effect Switches

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A1120EUA-T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SIP
包装说明：SIP3,.02,50针数：3
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：1.63Is Samacsys：N
其他特性：AEC-Q100; SHORT CIRCUIT PROTECTION主体宽度：1.52 mm
主体高度：4.12 mm主体长度或直径：4.09 mm
外壳：PLASTIC滞后：1 mT
输入模式：UNIPOLARJESD-609代码：e3
最大磁场范围：5 mT最小磁场范围：0.5 mT
安装特点：THROUGH HOLE MOUNT端子数量：3
最大工作电流：4 mA最高工作温度：150 °C
最低工作温度：-40 °C输出：OPEN-DRAIN
输出电路类型：TRANSISTOR最大输出电流：60 mA
输出范围：30-60mA输出类型：CURRENT OUTPUT
封装主体材料：PLASTIC/EPOXY封装等效代码：SIP3,.02,50
封装形状/形式：RECTANGULAR筛选级别：AEC-Q100
传感器/换能器类型：MAGNETIC FIELD SENSOR,HALL EFFECT最大供电电压：24 V
最小供电电压：3 V表面贴装：NO
技术：BICMOS端子面层：Matte Tin (Sn)
端接类型：SOLDERBase Number Matches：1

A1120EUA-T 数据手册

 浏览型号A1120EUA-T的Datasheet PDF文件第2页浏览型号A1120EUA-T的Datasheet PDF文件第3页浏览型号A1120EUA-T的Datasheet PDF文件第4页浏览型号A1120EUA-T的Datasheet PDF文件第6页浏览型号A1120EUA-T的Datasheet PDF文件第7页浏览型号A1120EUA-T的Datasheet PDF文件第8页 
A1120 and  
A1125  
Chopper Stabilized Precision Hall Effect Switches  
Functional Description  
give an indeterminate output state. The correct state is attained  
Operation  
after the first excursion beyond BOP or BRP  
.
The output of the A1120 devices switches low (turns on) when  
a magnetic field perpendicular to the Hall element exceeds the  
operate point threshold, BOP (see panel A of figure 1). When the  
magnetic field is reduced below the release point, BRP, the device  
output goes high (turns off). The output of the A1125 devices  
switches high (turns off) when a magnetic field perpendicular to  
the Hall element exceeds the operate point threshold, BOP (see  
panel B of figure 1). When the magnetic field is reduced below  
the release point, BRP, the device output goes low (turns on).  
Applications  
It is strongly recommended that an external bypass capacitor be  
connected (in close proximity to the Hall element) between the  
supply and ground of the device to reduce external noise in the  
application. As is shown in panel B of figure 1, a 0.1 μF capacitor  
is typical.  
Extensive applications information for Hall effect devicers is  
available in:  
After turn-on, the output voltage is VOUT(SAT). The output tran-  
sistor is capable of sinking current up to the short circuit current  
limit, IOM, which is a minimum of 30 mA.  
• Hall-Effect IC Applications Guide, Application Note 27701  
• Guidelines for Designing Subassemblies Using Hall-Effect  
Devices, Application Note 27703.1  
The difference in the magnetic operate and release points is the  
hysteresis, BHYS, of the device. This built-in hysteresis allows  
clean switching of the output even in the presence of external  
mechanical vibration and electrical noise. Powering-on the device  
in the hysteresis range (less than BOP and higher than BRP) will  
• Soldering Methods for Allegro’s Products – SMT and Through-  
Hole, Application Note 26009  
All are provided in Allegro Electronic Data Book, AMS-702, and  
the Allegro Web site, www.allegromicro.com.  
VS  
V+  
V+  
VCC  
VCC  
VCC  
RL  
A1120  
VOUT  
A1125  
Output  
CBYP  
VOUT(SAT)  
VOUT(SAT)  
B+  
0.1 μF  
GND  
0
0
B+  
0
0
BHYS  
(A)  
BHYS  
(B)  
(C)  
Figure 1. Device switching behavior. In panels A and B, on the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength.  
This behavior can be exhibited when using an electrical circuit such as that shown in panel C.  
Allegro MicroSystems, Inc.  
115 Northeast Cutoff  
5
Worcester, Massachusetts 01615-0036 U.S.A.  
1.508.853.5000; www.allegromicro.com  
123456789

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