生命周期: | Transferred | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.09 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 5 pF | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 220 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.65 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BC859A | FAIRCHILD | Switching and Amplifier Applications |
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BC859A | CENTRAL | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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BC859A | INFINEON | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain |
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BC859-A | SAMSUNG | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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BC859A/E8 | ETC | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 |
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BC859A/E9 | ETC | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 |
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