5秒后页面跳转
BC859AD87Z PDF预览

BC859AD87Z

更新时间: 2024-02-08 07:56:33
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 61K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

BC859AD87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.58
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC859AD87Z 数据手册

 浏览型号BC859AD87Z的Datasheet PDF文件第2页浏览型号BC859AD87Z的Datasheet PDF文件第3页浏览型号BC859AD87Z的Datasheet PDF文件第4页浏览型号BC859AD87Z的Datasheet PDF文件第5页 
BC856/857/858/859/860  
Switching and Amplifier Applications  
Suitable for automatic insertion in thick and thin-film circuits  
Low Noise: BC859, BC860  
Complement to BC846 ... BC850  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
CBO  
: BC856  
: BC857/860  
: BC858/859  
-80  
-50  
-30  
V
V
V
Collector-Emitter Voltage  
CEO  
: BC856  
: BC857/860  
: BC858/859  
-65  
-45  
-30  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
-5  
-100  
V
EBO  
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
310  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-15  
Units  
I
V
V
= -30V, I =0  
nA  
CBO  
CB  
E
h
= -5V, I = -2mA  
110  
800  
FE  
CE  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
I = -10mA, I = -0.5mA  
-90  
-250  
-300  
-650  
mV  
mV  
CE  
BE  
BE  
C
B
I = -100mA, I = -5mA  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -10mA, I = -0.5mA  
-700  
-900  
mV  
mV  
C
B
I = -100mA, I = -5mA  
C
B
V
V
= -5V, I = -2mA  
-600  
-660  
-750  
-800  
mV  
mV  
CE  
CE  
C
= -5V, I = -10mA  
C
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA  
150  
MHz  
T
CE  
C
f=100MHz  
C
Output Capacitance  
V
V
= -10V, I =0, f=1MHz  
6
pF  
ob  
CB  
E
NF  
Noise Figure  
: BC856/857/858  
: BC859/860  
: BC859  
= -5V, I = -200µA  
2
1
1.2  
1.2  
10  
4
4
dB  
dB  
dB  
dB  
CE  
C
f=1KHz, R =2KΩ  
G
V
= -5V, I = -200µA  
CE  
C
: BC860  
R =2K, f=30~15000Hz  
2
G
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

与BC859AD87Z相关器件

型号 品牌 描述 获取价格 数据表
BC859AE6327 INFINEON Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

获取价格

BC859AE6433 INFINEON Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

获取价格

BC859A-GS08 VISHAY Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC

获取价格

BC859-AH SWST 小信号晶体管

获取价格

BC859AL ETC TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23

获取价格

BC859AL99Z FAIRCHILD Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

获取价格