2N6724

更新时间： 2024-01-11 18:27:10

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1页	27K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

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技术参数
数据手册

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2N6724 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.67
Base Number Matches：	1

2N6724 数据手册

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1 MARCH 94

2N6724

2N6725

FEATURES

50 Volt V_CEO

Gain of 15k at I_C= 0.5 Amp

P_tot=1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

2N6724 2N6725

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb= 25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

2N6724

2N6725

UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1µA, I_E=0

I_C=1mA, I_B=0*

I_E=10µA, I_C=0

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

1.0

0.1

_CB=30V, I_E=0

_CB=40V, I_E=0

µA

1.0

0.1

Emitter Cut-Off

Current

I_EBO

V_EB=8V, I_C=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

h_FE

1.0

1.5

1.0

1.5

I_C=200mA, I_B=2mA*

I_C=1A, I_B=2mA*

Base-Emitter

Saturation Voltage

2.0

IC=1A, I_B=2mA*

Base-Emitter

Turn-On Voltage

2.0

IC=1A, V_CE=5V*

Static Forward

Current Transfer

Ratio

25K

15K

25K

15K

I_C=200mA, V_CE=5V*

I_C=500mA, V_CE=5V*

I_C=1A, V_CE=5V*

40K

Collector Base

Capacitance

C_CB

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-7

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