MMBT3904

更新时间： 2024-02-19 23:10:05

品牌	Logo	应用领域
WEITRON		晶体晶体管开关光电二极管
页数	文件大小	规格书
7页	142K
描述
General Purpose Transistor NPN Silicon

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

MMBT3904

COLLECTOR

General Purpose Transistor

NPN Silicon

BASE

SOT-23

EMITTER

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CEO

Vdc

CBO

Emitter-Base VOltage

Collector Current-Continuous

6.0

200

Vdc

mAdc

EBO

Thermal Characteristics

Characteristics

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

TA=25 C

Derate above 25 C

225

1.8

mW/ C

C/W

Thermal Resistance, Junction to Ambient

556

300

Total Device Dissipation

(2)

Alumina Substrate, TA=25 C

Derate above 25 C

2.4

mW/ C

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature

417

J,Tstg

-55 to +150

Device Marking

MMBT3904=1AM

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Unit

Min

Max

Off C haracteristics

(3)

Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)

V(BR)CEO

V(BR)CBO

Vdc

Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)

Vdc

V(BR)EBO

IBL

6.0

Base Cutoff Current (VCE=30 Vdc,VEB =3.0 Vdc)

Collector Cutoff Current (VCE=30Vdc,VEB=3.0Vdc)

nAdc

ICEX

1.FR-5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

3.Pulse Test:Pukse Width 300 uS, Duty Cycle 2.0%.

WEITRON

http://www.weitron.com.tw

12 3 4 5 6 7

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