Product specification
KMBT3904(MMBT3904)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Epitaxial planar die construction
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
40
V
6
V
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
0.2
A
PC
0.2
W
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
60
40
6
Typ
Max
Unit
V
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
IcBO
Ic= 100 ìA IE=0
Ic= 1 mA IB=0
IE= 10 IC=0
V
V
A
VCB= 60 V , IE=0
0.1
50
A
Collector cut-off current
IcEO
VCE= 30 V , VBE(off)=3V
VEB= 5V , IC=0
nA
A
Emitter cut-off current
IEBO
0.1
400
VCE= 1V, IC= 10mA
VCE= 1V, IC= 50mA
100
60
DC current gain
hFE
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
VCE(sat) IC=50 mA, IB= 5mA
VBE(sat) IC= 50 mA, IB= 5mA
0.3
0.95
35
V
V
td
tr
VCC=3.0V,VBE=-0.5V
IC=10mA,IB1=-IB2=1.0mA
VCC=3.0V,IC=10mA
IB1=-IB2=1.0mA
ns
Rise time
35
Storage time
ts
tf
200
50
ns
Fall time
Transition frequency
fT
VCE= 20V, IC= 10mA,f=100MHz
250
MHz
Marking
Marking
1AM
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