5秒后页面跳转
2SA1426-Y PDF预览

2SA1426-Y

更新时间: 2024-01-01 17:22:18
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 128K
描述
TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal

2SA1426-Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.87
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzVCEsat-Max:0.7 V
Base Number Matches:1

2SA1426-Y 数据手册

 浏览型号2SA1426-Y的Datasheet PDF文件第2页浏览型号2SA1426-Y的Datasheet PDF文件第3页浏览型号2SA1426-Y的Datasheet PDF文件第4页 
2SA1426  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1426  
Audio Power Amplifier Applications  
Unit: mm  
High h : h  
= 100 to 320  
FE FE  
1-W output applications  
Complementary to 2SC3666.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
800  
160  
1000  
150  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
j
JEDEC  
JEITA  
T
stg  
55 to 150  
Note1: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-7D101A  
Weight: 0.2 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-12-21  

与2SA1426-Y相关器件

型号 品牌 描述 获取价格 数据表
2SA1426-Y(TPF2) TOSHIBA TRANSISTOR,BJT,PNP,30V V(BR)CEO,800MA I(C),SC-71

获取价格

2SA1428 TOSHIBA TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

获取价格

2SA1428_09 TOSHIBA Power Amplifier Applications Power Switching Applications

获取价格

2SA1428O ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SC-71

获取价格

2SA1428-O TOSHIBA TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General P

获取价格

2SA1428Y ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SC-71

获取价格