Datasheet > 0724_XP132A1275SR

0724_XP132A1275SR

更新时间： 2022-11-25 12:24:50

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	158K
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Power MOS FET

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0724_XP132A1275SR 数据手册

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11S_13XP132A1275SR 02.9.12 3:55 PM ページ 735

Power MOS FET

NP-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance : 0.075Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

■General Description

■Features

The XP132A1275SR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )

: Rds (on) = 0.115Ω ( Vgs = -2.5V )

Ultra high-speed switching

Operational Voltage

: -2.5V

The small SOP-8 package makes high density mounting possible.

High density mounting : SOP-8

■Pin Configuration

■Pin Assignment

１�

２�

８�

PIN NUMBER

PIN NAME

FUNCTION

Ｓ�

Ｇ�

Ｄ�

７�

1 ～�3

Source

Gate

３�

４�

６�

5 ～�8

Drain

５�

SOP-8�

（TOP VIEW）�

■Equivalent Circuit

■Absolute Maximum Ratings _{Ta=25 C}

SYMBOL

RATINGS

UNITS

PARAMETER

１�

２�

８�

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

-20

７�

-5

-20

-5

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Idp

Idr

３�

４�

６�

５�

2.5

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

P-Channel MOS FET�

( 1 device built-in )

Tstg

-55 ~ 150

( note ) : When implemented on a glass epoxy PCB

735

12 3 4

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