生命周期: | Active | 零件包装代码: | TO-236 |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 1.02 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO 1 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 250 | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PDSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
PBRP123ET-Q | NEXPERIA | 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2. |
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PBRP123YT | NXP | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW |
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PBRP123YT | NEXPERIA | 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 |
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PBRP123YT,215 | NXP | PBRP123YT - PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm TO-236 3-Pin |
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PBRP123YT-Q | NEXPERIA | 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 |
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PBRP123YTT/R | NXP | PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,600MA I(C),SOT-23 |
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