Datasheet > PBRP123ET-Q

PBRP123ET-Q

更新时间： 2023-09-03 20:29:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	264K
描述
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩProduction

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PBRP123ET-Q 数据手册

PBRP123ET-Q

40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

6 May 2021

Product data sheet

1. General description

PNP low V_CEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN123ET-Q

2. Features and benefits

•

600 mA output current capability

•

Low collector-emitter saturation voltage V_CEsat

High current gain h_FE

Reduces component count

Built-in bias resistors

Reduces pick and place costs

Simplifies circuit design

± 10 % resistor ratio tolerance

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital application in automotive and industrial segments

Switching loads

Medium current peripheral driver

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-40

I_O

output current

bias resistor 1

bias resistor ratio

[1]

[2]

-600

2.86

1.1

kΩ

1.54

0.9

2.2

R2/R1

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.

[2] See section "Test information" for resistor calculation and test conditions

12 3 4 5 6 7...13

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