PBRP123YT-Q
40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ
7 May 2021
Product data sheet
1. General description
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small
SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123YT-Q
2. Features and benefits
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600 mA output current capability
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•
•
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Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
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Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-40
V
IO
output current
bias resistor 1
bias resistor ratio
[1]
[2]
[2]
-
-
-600
2.86
5
mA
kΩ
R1
1.54
4.1
2.2
4.55
R2/R1
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.
[2] See section "Test information" for resistor calculation and test conditions