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NTE6415 PDF预览

NTE6415

更新时间: 2024-02-12 05:59:00
品牌 Logo 应用领域
NTE 触发装置二极管双向触发二极管
页数 文件大小 规格书
2页 21K
描述
Bidirectional Thyristor Diodes (SIDAC)

NTE6415 技术参数

生命周期:Active包装说明:LONG FORM, O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:2.16
Is Samacsys:N最大转折电压:60 V
最小转折电压:45 V外壳连接:ISOLATED
配置:SINGLE最大维持电流:50 mA
标称维持电流:50 mAJESD-30 代码:O-PALF-W2
通态非重复峰值电流:13 A元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified子类别:Silicon Surge Protectors
表面贴装:NO端子形式:WIRE
端子位置:AXIAL触发设备类型:SIDAC
Base Number Matches:1

NTE6415 数据手册

 浏览型号NTE6415的Datasheet PDF文件第2页 
NTE6415 thru NTE6419  
Bidirectional Thyristor Diodes (SIDAC)  
Description:  
The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with  
greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding  
the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to  
a low on–state voltage. Conduction will continue until the current is interrupted or drops below the  
minimum holding current of the device.  
Features:  
D Especially Effective in AC Circuits  
D Switching Function Directly with the AC Power Line  
D Applicable for Various Pulse Generators  
Applications:  
D High Voltage Lamp Ignitors  
D Xenon Ignitors  
D Natural Gas Ignitors  
D Overvoltage Protection  
D Pulse generators  
D Gas Oil Ignitors  
D High Voltage Power Supplies  
D Fluorescent Lighting Ignitors  
Absolute Maximum Ratings:  
Peak Off Voltage, VDRM  
NTE6415, NTE6416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V  
NTE6417, NTE6418, NTE6419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V  
Effective Current (TA = +40°C, 50Hz, Sine Wave, Conducting Angle = 180°), IT . . . . . . . . . . . . . . 1A  
Surge Current (50Hz, Non–Repeated 1 Cycle Sine wave, Peak Value), ITSM . . . . . . . . . . . . . . . 13A  
Peak Current (TA = +40°C, Pulse Width = 10µs, f = 1kHz), ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . 20A  
Current Rise Rate, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs  
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +125°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15°C/W  
Lead Temperature (During Soldering, 5mm from case, 5sec max), TL . . . . . . . . . . . . . . . . . . +250°C  

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