NTE6508

更新时间： 2024-01-19 01:39:40

品牌	Logo	应用领域
NTE		静态存储器
页数	文件大小	规格书
4页	40K
描述
Integrated Circuit CMOS, 1K Static RAM (SRAM)

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NTE6508 数据手册

NTE6508

Integrated Circuit

CMOS, 1K Static RAM (SRAM)

Description:

The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using

self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive

high performance and low power operation. On chip latches are provided for address allowing effeci-

ent interfacing with microprocessor systems. The data output buffers can be forced to a high imped-

ance state for use in expanded memory arrays.

Features:

D Low Power Standby: 50µW Max

D Low Power Operation: 20mW/MHz Max

D Fast Access Time: 300ns Max

D Data Retention: 2V Min

D TTL Compatible Input/Output

D High Output Drive: 2 TTL Loads

D On–Chip Address Register

Absolute Maximum Ratings: (Note 1)

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V

Input, Output or I/O Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND –0.3V to V_CC+0.3V

Typical Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mA/MHz increase in I_CC(OP)

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925 Gates

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C

Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Lead Temperature (During Soldering, 10s max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C

Note 1. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage

to the device. This is a stress only rating and operation of the device at these or any other

conditions above those indicated in the operational sections of this specification is not im-

plied. This device is sensitive to electrostatic discharge, users should follow proper IC han-

dling procedures.

Recommended Operating Conditions:

Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C

12 3 4

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