Datasheet > MMBT3904

MMBT3904

更新时间： 2024-02-22 15:37:01

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
4页	101K
描述
NPN General Purpose Amplifier

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

Discr ete P ower & Sign a l

Tech n ologies

2N3904

MMBT3904

TO-92

SOT-23

Mark: 1A

MMPQ3904

PZT3904

SOT-223

SOIC-16

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to

100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

200

Collector Current - Continuous

°C

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

12 3 4

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