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IRLR3915 PDF预览

IRLR3915

更新时间: 2024-01-01 20:24:12
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 580K
描述
HEXFET Power MOSFET

IRLR3915 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, DPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):120 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLR3915 数据手册

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PD - 94543  
IRLR3915  
IRLU3915  
AUTOMOTIVE MOSFET  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 55V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 14mΩ  
G
Description  
ID = 30A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this product are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating. These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D-Pak  
I-Pak  
IRLU3915  
IRLR3915  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
61  
43  
A
30  
240  
PD @TC = 25°C  
Power Dissipation  
120  
W
W/°C  
V
Linear Derating Factor  
0.77  
VGS  
Gate-to-Source Voltage  
16  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value‡  
Avalanche Current  
200  
600  
mJ  
EAS (6 sigma)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
Repetitive Avalanche Energy†  
Operating Junction and  
mJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
110  
Max.  
1.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)ˆ  
50  
°C/W  
Junction-to-Ambient–––  
HEXFET(R) is a registered trademark of International Rectifier.  
www.irf.com  
1
09/06/02  

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