Datasheet > BC817SU_08

BC817SU_08

更新时间： 2022-12-18 06:21:44

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	528K
描述
NPN Silicon AF Transistor

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数据手册

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BC817SU_08 数据手册

BC817SU

NPN Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type

BC817SU

Marking

B6s

Pin Configuration

1=E 2=C 3=C 4=C 5=C 6=B SC74

Package

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Symbol

Value

500

Unit

CEO

CBO

EBO

Peak collector current, t ≤ 10 ms

100

200

1000

Base current

Peak base current

Total power dissipation-

°C

tot

T ≤ 100°C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 50

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2008-10-20

12 3 4 5 6

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