Datasheet > MMBT3904

MMBT3904

更新时间： 2024-02-22 21:53:40

品牌	Logo	应用领域
DAYA		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	180K
描述
SOT-23 Plastic-Encapsulate Transistors

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技术参数
数据手册

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MMBT3904 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904 数据手册

SOT-23 Plastic-Encapsulate Transistors

MMBT3904

TRANSISTOR (NPN)

SOT-23

FEATURES

As complementary type the PNP transistor MMBT3906 is recommended

Epitaxial planar die construction

MARKING: 1AM

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

200

℃/W

℃

P_C

200

R_θJA

T_J

625

150

T_stg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

I_CEX

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10μA, I_E=0

I_C= 1mA, I_B=0

I_E=10μA, I_C=0

V_CB=60V, I_E=0

0.1

μA

Collector cut-off current

V_CE=30V,V_BE(off)=3V

V_EB=5V, I_C=0

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

0.1

400

V_CE=1V, I_C=10mA

100

DC current gain

V_CE=1V, I_C= 50mA

V_CE=1V, I_C= 100mA

I_C=50mA, I_B= 5mA

I_C= 50mA, I_B= 5mA

V_CE= 20V, I_C= 10mA,f=100MHz

V_CC=3V,V_BE=-0.5V

I_C=10mA, I_B1=-I_B2=1.0mA

V_CC=3.0V,I_C=10mAdc

I_B1=-I_B2=1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

0.3

0.95

300

MHz

Rise Time

Storage Time

200

Fall Time

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

200-300

300-400

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