Datasheet > 9C12063A10R0FKHFT

9C12063A10R0FKHFT

更新时间： 2024-10-02 08:11:55

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	808K
描述
RF Power Field Effect Transistor

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Document Number: MRF8S9102N

Rev. 0, 2/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 865 to

960 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

MRF8S9102NR3

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

750 mA, P_out= 28 Watts Avg., IQ Magnitude Clipping, Channel

865--960 MHz, 28 W AVG., 28 V

SINGLE W--CDMA

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFET

Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

23.1

22.8

(%)

36.4

36.6

6.3

6.2

6.1

--35.5

--36.1

--35.8

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

Typical P_out@ 1 dB Compression Point ≃ 100 Watts CW

CASE 2021--03, STYLE 1

O M -- 7 8 0 -- 2

880 MHz

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

750 mA, P_out= 28 Watts Avg., IQ Magnitude Clipping, Channel

PLASTIC

•

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

865 MHz

880 MHz

895 MHz

(dB)

22.9

23.0

22.8

(%)

35.4

35.5

35.6

6.4

6.2

6.0

--34.7

--35.1

--35.7

Features

•

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

MRF8S9102NR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与9C12063A10R0FKHFT相关器件

型号	品牌	获取价格	描述	数据表
9C12063A10R0FKPFT	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 10ohm, 200V, 1% +/-Tol, 200ppm/Cel, Surface
9C12063A10R0JLHF3	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 10ohm, 200V, 5% +/-Tol, -200,200ppm/Cel, 1206,
9C12063A10R0JLHFT	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 10ohm, 200V, 5% +/-Tol, 200ppm/Cel, Surface
9C12063A10R7FKT	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 10.7ohm, 200V, 1% +/-Tol, 100ppm/Cel, Surfa
9C12063A1100JLHFT	YAGEO	获取价格	RES SMD 110 OHM 5% 1/4W 1206
9C12063A1101JLHFT	YAGEO	获取价格	RES SMD 1.1K OHM 5% 1/4W 1206
9C12063A1102JLHFT	YAGEO	获取价格	RES SMD 11K OHM 5% 1/4W 1206
9C12063A1103FKHFT	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 110000ohm, 200V, 1% +/-Tol, 100ppm/Cel, Sur
9C12063A1103JLAF6	YAGEO	获取价格	Fixed Resistor, Metal Glaze/thick Film, 110000ohm, 200V, 5% +/-Tol, -200,200ppm/Cel, 1206,
9C12063A1103JLHFT	YAGEO	获取价格	Fixed Resistor, Thin Film, 110000ohm, 200V, 5% +/-Tol, -200,200ppm/Cel, 1206

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