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91MT100KB PDF预览

91MT100KB

更新时间: 2024-02-04 07:07:05
品牌 Logo 应用领域
威世 - VISHAY 局域网栅极
页数 文件大小 规格书
9页 111K
描述
Silicon Controlled Rectifier, 1000 V, SCR

91MT100KB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X14Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.2
其他特性:UL APPROVED外壳连接:ISOLATED
配置:3 PHASE BRIDGE, HALF-CONTROLLED, COMMON ANODE最大直流栅极触发电流:150 mA
最大直流栅极触发电压:2.5 V快速连接描述:3G
螺丝端子的描述:3AK-2CA-CK最大维持电流:200 mA
JESD-30 代码:R-PUFM-X14最大漏电流:20 mA
通态非重复峰值电流:800 A元件数量:3
端子数量:14最大通态电流:90000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:1000 V
重复峰值反向电压:1000 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

91MT100KB 数据手册

 浏览型号91MT100KB的Datasheet PDF文件第1页浏览型号91MT100KB的Datasheet PDF文件第2页浏览型号91MT100KB的Datasheet PDF文件第3页浏览型号91MT100KB的Datasheet PDF文件第5页浏览型号91MT100KB的Datasheet PDF文件第6页浏览型号91MT100KB的Datasheet PDF文件第7页 
53-93-113MT..KB Series  
Bulletin I27503 08/97  
R Conduction (per Junction)  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sinusoidal conduction @ TJ max.  
Rectangular conduction @ TJ max.  
Devices  
Units  
180o  
0.072  
0.033  
120o  
0.085  
0.039  
0.033  
90o  
60o  
30o  
180o  
0.055  
0.027  
0.023  
120o  
0.091  
0.044  
0.037  
90o  
60o  
30o  
53/52/51MT.KB  
93/92/91MT.KB  
0.108  
0.051  
0.042  
0.152  
0.069  
0.057  
0.233  
0.099  
0.081  
0.117  
0.055  
0.046  
0.157  
0.071  
0.059  
0.236 K/W  
0.100  
113/112/111MT.KB 0.027  
0.082  
Ordering Information Table  
Device Code  
11  
3
MT 160  
K
B
S90  
1
2
3
4
5
6
1
2
-
-
Current rating code: 5 = 55 A (Avg)  
= 90 A (Avg)  
11 = 110 A (Avg)  
Circuit configuration code: 3 = Full-controlled bridge  
9
2 = Positive half-controlled bridge  
1 = Negative half-controlled bridge  
3
4
5
6
-
-
-
-
Essential part number  
Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)  
Generation II  
Critical dv/dt: None = 500V/µs (Standard value)  
S90 = 1000V/µs (Special selection)  
full-controlled bridge  
(53, 93, 113MT..KB)  
negative half-controlled bridge  
(51, 91, 111MT..KB)  
positive half-controlled bridge  
(52, 92, 112MT..KB)  
NOTE: To order the Optional Hardware see Bulletin I27900  
4
www.irf.com  

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