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8P004SRA1300I15

更新时间： 2024-02-13 02:52:08
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
10页 111K
描述
SRAM Card, 2MX16, 150ns, CMOS, CADR1-68

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8P004SRA1300I15 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CADR1-68Reach Compliance Code：unknown
风险等级：5.92最长访问时间：150 ns
备用内存宽度：8JESD-30 代码：X-XXMA-X68
内存密度：33554432 bit内存集成电路类型：SRAM CARD
内存宽度：16功能数量：1
端子数量：68字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：UNSPECIFIED
封装形状：UNSPECIFIED封装形式：MICROELECTRONIC ASSEMBLY
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：INDUSTRIAL端子形式：UNSPECIFIED
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

8P004SRA1300I15 数据手册

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PCMCIA SRAM Memory Card  
SRA Series  
Absolute Maximum Ratings (2)  
Notes:  
(1) During transitions, inputs may undershoot to  
-2.0V or overshoot to VCC +2.0V for periods  
less than 20ns.  
Operating Temperature TA (ambient)  
Commercial  
0°C to +60 °C  
(2) Stress greater than those listed under  
“Absolute Maximum ratings” may cause  
permanent damage to the device. This is a  
stress rating only and functional operation at  
these or any other conditions greater than those  
indicated in the operational sections of this  
specification is not implied. Exposure to  
absolute maximum rating conditions for  
extended periods may affect reliability.  
Industrial  
Storage Temperature  
Commercial  
Industrial  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
-40°C to +85 °C  
0°C to +60 °C  
-40°C to +85 °C  
-0.5V to VCC+0.5V (1)  
-0.5V to +7.0V  
DC Characteristics (1)  
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Sym  
Parameter  
Density Notes Min  
Typ(3) Max  
Units Test Conditions  
ICC  
VCC Active Current  
64KB  
128KB  
256KB  
512KB  
1MB  
to  
1
90  
90  
90  
90  
110  
180  
180  
180  
180  
190  
mA  
VCC = 5.25V  
tcycle = 150ns  
8MB  
ICCS  
ILI  
VCC Standby Current  
Input Leakage Current  
Output Leakage Current  
All  
2,4  
5,6  
6
< 0.1  
< 1  
10  
mA  
VCC = 5.25V  
Control Signals = VCC  
VCC = VCCMAX  
Vin =VCC or VSS  
VCC = VCCMAX  
Vout =VCC or VSS  
All  
All  
±20  
µA  
ILO  
±20  
0.8  
µA  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
All  
All  
6
6
0
V
V
3.85  
VCC  
+0.5  
0.4  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
All  
All  
6
6
V
V
IOL = 3.2mA  
IOH = -2.0mA  
VCC-  
0.4  
VCC  
Notes:  
1. All currents are for x16 mode and are RMS values unless otherwise specified.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. Typical: VCC = 5V, T = +25C.  
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully  
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully  
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.  
5. Values are the same for byte and word wide modes for all card densities.  
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to  
internal pull-up resistors.  
Battery Characteristics  
SRA11-14  
Type I  
min 10  
SRA01-04  
Type I Type II  
min 10  
Parameter  
Battery Life  
Density  
All  
Notes  
(1)  
Units  
years  
Conditions  
Normal operation, T=25C  
256KB  
512KB, 1MB  
2MB  
(2)  
-
24  
18  
12  
7
60  
45  
30  
17  
17  
T=25C  
Battery backup time is a  
calculated value and is not  
32  
22  
12  
12  
Battery  
Backup Time  
months  
4MB  
6MB  
(typical) guaranteed. This should  
not be used to schedule  
7
battery recharging.  
8MB  
12  
-
-
Notes:  
1. Battery Life refers to functional lifetime of battery.  
2. Battery backup time is density and temperature dependent.  
5
February 2002 Rev. 6  
PC Card Products  
12345678...10

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