81CXXX/81NXXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
×0.98
VDF
×0.02
0.7
DF (T)
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.05 ×0.08
10.0
VDF=1.6V ~ 6.0V
VIN=2.0V
V
1.0
2.0
7.9
3.0
4.2
μA
μA
mA
ISS
VIN=5.0V
VDS=0.5V, VIN =2.0V
Output Current
P- Channel
IOUT
VDS=2.1V, VIN=8.0V
-15.4
±100
mA
ppm/°C
ms
(CMOS output)
ΔVDF
VDF
ΔTOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
Detection voltage (3.0V ~ 3.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
DF (T)
×0.98
VDF
V
DF (T)
×1.02
VDF
Detect Voltage
VDF
1
V
DF (T)
V
V
VDF
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
VHYS
VIN
1
1
2
3
4
×0.02 ×0.05 ×0.08
VDF=1.6V ~ 6.0V
IN =3.0V
0.7
10.0
3.4
V
V
1.3
2.0
μA
μA
mA
ISS
VIN =5.0V
4.2
VDS=0.5V, VIN =3.0V
10.1
Output Current
P- Channel
IOUT
VDS=2.1V, VIN=8.0V
-15.4
±100
mA
ppm/°C
ms
(CMOS output)
ΔVDF
VDF
ΔTOPR × VDF
Temperature Characteristics
Transient Delay Time
(VDR ÆVOUT inversion)
VIN changes from
tDLY
*
5
50
200
0.6V ~ 10V
UNISONIC TECHNOLOGIES CO., LTD
6 of 16
QW-R502-039,P
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