85HF / 85HFR
NAINA
SILICON POWER DIODE
DO-5
FEATURES
•
•
•
•
Diffused Series
7
Available in Normal & Reverse Polarity
Industrial Grade
POLARITY
Ø 4.0
A
C
27
12
Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICALSPECIFICATIONS
C
A
Reverse
Normal
17 A/F
11.5
M8 x 1.25
16
IF
Maximum Average Forward
Current T=1250C
85A
1.4V
Ø 8.0
VFM
IFSM
IFRM
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive surge current
POLARITY
A
C
A
1270 A
405 A
C
Reverse
Normal
32
12
17 A/F
2
2
I t
Maximum I t rating (non-rep.) for 5 to 10
8064
2
11.5
M 8 x 1.25
msec.
A
Sec
THERMALMECHANICALSPECIFICATIONS
θJC
Tj
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0.500C/W
-650C to 1500C
-650C to 2000C
0.4 M-kg min,
0.6 M-kg max
13.5 & 30 gms.
Tstg
W
ELECTRICALRATINGS
TYPE
VRRM
85HF/HFR
Max. repetitive peak reverse
voltage (v)
10
100
20
40
60
80
100
120
140
160
200 400 600
800 1000
1200 1400 1600
VR(RMS) Max. R.M.S. reverse voltage(V)
70
140 280 420
200 400 600
560
700
840
980 1120
VR
Max. D.C. Blocking Voltage (V)
100
800 1000
1200 1400 1600
Recommended R.M.S. working
Voltage(v)
40
80
160 240
320
200
400
200
480
200
560
200
640
200
IR(AV)
Max. Average reverse leakage
200
200 200 200
current @ VRRM Tc 250C uA
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63 NOIDA(INDIA)
e-mail: sales@nainasemi.com , web site: www.nainasemi.com