NGB8202AN
TYPICAL ELECTRICAL CHARACTERISTICS
10000
45
40
35
30
25
20
15
10
5
V
CE
= 5 V
1000
V
CE
= −24 V
100
10
T = 25°C
J
V
CE
= 200 V
1.0
0.1
T = 175°C
J
T = −40°C
J
0
−50 −25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GE
, GATE TO EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
1000
100
2.50
2.25
2.00
1.75
1.50
Mean
C
iss
Mean + 4 s
C
oss
C
rss
Mean − 4 s
1.25
1.00
0.75
0.50
10
1.0
0.1
0.25
0
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
8
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 W
G
CC
GE
t
fall
I
C
= 9.0 A
L = 300 mH
t
delay
t
delay
6
4
2
0
6
4
2
0
t
V
V
R
= 300 V
= 5.0 V
= 1000 W
fall
CC
GE
G
I
C
= 9.0 A
R = 33 W
L
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
6
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D