Datasheet > 8050SG-X-T92-R

8050SG-X-T92-R

更新时间： 2022-09-26 14:19:36

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
4页	185K
描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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数据手册

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8050SG-X-T92-R 数据手册

8050S

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING ( T_A=25°C, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

700

SOT-23

TO-92

350

Collector Dissipation(T_A=25°C)

P_C

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

BV_CBOI_C= 100μA, I_E= 0

BV_CEOI_C= 1mA, I_B= 0

BV_EBOI_E= 100μA, I_C=0

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

V_CB= 30V,I_E= 0

Emitter Cut-Off Current

V_EB= 5V, I_C= 0

100

400

V_CE= 1V, I_C= 1mA

V_CE= 1V, I_C= 150 mA

V_CE= 1V, I_C= 500mA

100

120

DC Current Gain(note)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

V_CE(SAT)I_C= 500mA, I_B= 50mA

V_BE(SAT)I_C= 500mA, I_B= 50mA

V_BE(SAT)V_CE= 1V, I_C= 10mA

0.5

1.2

1.0

f_T

V_CE= 10V, I_C= 50mA

100

MHz

Cob

V_CB= 10V, I_E= 0, f = 1MHz

9.0

CLASSIFICATION OF h_FE2

RANK

RANGE

120-200

160-300

280-400

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R206-001,F

www.unisonic.com.tw

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