Datasheet > 7MBR75VJC120-50

7MBR75VJC120-50

更新时间： 2024-03-03 10:10:08

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
9页	688K
描述
PIM(conv.+Brake+inv.)

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7MBR75VJC120-50 数据手册

7MBR75VJC120-50

IGBT Modules

■ Electrical characteristics ( at Tj= 25°C unless otherwise specified)

Characteristics

typ.

Items

Symbols

I_CES

Conditions

1200V

20V

Units

min.

max.

Zero gate voltage

collector current

Gate-Emitter

V_GE

1.0

V_CE

V_GE

V_CE

I_C=

V_GE

I_C=

I_GES

200

7.0

leakage current

Gate-Emitter

threshold voltage

20V

V_GE(th)

6.0

6.5

75mA

15V

75A

Tj= 25^oC

Tj=125^oC

Tj=150^oC

Tj= 25^oC

Tj=125^oC

Tj=150^oC

2.15

2.50

2.55

1.85

2.20

2.25

260

2.60

2.30

V_CE(sat)

(terminal)

Collector-Emitter

saturation voltage

V_GE=

I_C=

15V

75A

V_CE(sat)

(chip)

Collector power disipation

Internal gate resistance

Input capacitance

Rg(int)

Cies

ton

tr (i)

toff

Ω

1 device

V_CE=10V,V_GE=0V,f=1MHz

V_CC= 600V

I_C= 75A

6.1

0.42

0.11

0.04

0.44

0.06

2.25

2.50

2.45

1.95

2.20

2.15

1.20

0.60

1.00

0.30

2.70

Turn-on time

Turn-off time

V_GE=

μs

±15V

R_G= 2 Ω

Tj= 25^oC

Tj=125^oC

Tj=150^oC

Tj= 25^oC

Tj=125^oC

Tj=150^oC

V_F

I_F=

75A

(terminal)

Forward on voltage

2.40

0.35

V_F

(chip)

Reverse recovery time

Zero gate voltage

collector current

Gate-Emitter

trr

I_F=

V_GE

75A

1200V

μs

I_CES

1.0

V_CE

V_GE

I_C=

I_GES

200

leakage current

±20V

15V

75A

Tj= 25^oC

Tj=125^oC

Tj=150^oC

Tj= 25^oC

Tj=125^oC

Tj=150^oC

2.15

2.50

2.55

1.85

2.20

2.25

260

10.0

0.42

0.11

0.44

0.06

2.60

2.30

V_CE(sat)

(terminal)

Collector-Emitter

saturation voltage

V_GE=

I_C=

15V

75A

V_CE(sat)

(chip)

Collector power disipation

Internal gate resistance

Rg(int)

ton

toff

Ω

1 device

V_CE=

600V

75A

1.20

0.60

1.00

0.30

1.0

Turn-on time

I_C=

V_GE

μs

±15V

R_G= 2 Ω

V_R= 1200V

Turn-off time

Reverse current

I_RRM

I_F=

75A

1.55

1.25

terminal

chip

V_FM

I_RRM

Forward on voltage

Reverse current

V_R= 1600V

25^oC

1.0

Ω

1000

1670

T =

100^oC

T =

Im=1mA

Temperature Sensor

■ Thermal resistance characteristics

Characteristics

Items

Symbols

Conditions

Units

min.

typ.

0.58

0.75

0.90

max.

Inverter / Brake IGBT

Inverter FWD

Converter Diode

Thermal resistance(1device)

Rth(j-c)

^oC/W

Contact thermal resistance

(1device) (*4)

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

Rth(c-f)

with Thermal Compound

0.05

FM6M1623

2015/08

1 234 5 6 7...9

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