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7MBP50VDA120-50 PDF预览

7MBP50VDA120-50

更新时间: 2024-02-01 21:00:48
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
11页 703K
描述
IGBT MODULE (V series) 1200V / 50A / IPM

7MBP50VDA120-50 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.57
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERBase Number Matches:1

7MBP50VDA120-50 数据手册

 浏览型号7MBP50VDA120-50的Datasheet PDF文件第3页浏览型号7MBP50VDA120-50的Datasheet PDF文件第4页浏览型号7MBP50VDA120-50的Datasheet PDF文件第5页浏览型号7MBP50VDA120-50的Datasheet PDF文件第7页浏览型号7MBP50VDA120-50的Datasheet PDF文件第8页浏览型号7MBP50VDA120-50的Datasheet PDF文件第9页 
7MBP50VDA120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Switching Loss vs. Collector Current (typ.)  
Switching Loss vs. Collector Current (typ.)  
V
DC=600V,VCC=15V,T  
j
=25  
V
DC=600V,VCC=15V,T=125℃  
j
10  
8
10  
8
Eon  
E
on  
6
6
E
off  
Eoff  
4
4
Err  
2
2
Err  
0
0
0
0
0
10  
20  
30  
40  
50  
[ A ]  
60  
70  
80  
1500  
150  
0
10  
20  
30  
40  
50  
[ A ]  
60  
70  
80  
Collector current I  
C
Collector current I  
C
Reversed biased safe operating area  
CC=15V,T125[Main Terminal] (min.)  
Transient thermal resistance (max.)  
V
j
200  
150  
100  
50  
10  
1
FWD  
IGBT  
0.1  
0.01  
RBSOA  
(Repetitive pulse)  
0
300  
600  
900  
1200  
0.001  
0.01  
0.1  
1
10  
Collector-Emitter voltage VCE [ V ]  
Pulse width P [ sec ]  
W
Power derating for IGBT (max.)  
[per device]  
Power derating for FWD (max.)  
[per device]  
300  
300  
200  
100  
0
200  
100  
0
50  
100  
[ ]  
0
50  
100  
[ ]  
150  
Case Temperature T  
C
Case Temperature T  
C
6

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