Datasheet > 7MBP75RA-120

7MBP75RA-120

更新时间： 2024-11-18 23:24:51

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
7页	330K
描述
IGBTs

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中文翻译

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数据手册

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7MBP75RA-120 数据手册

IGBT IPM

1200V

6x75A+Chopper

7MBP 75RA-120

Intelligent Power Module ( R-Series )

n Maximum Ratings and Characteristics

n Outline Drawing

• Absolute Maximum Ratings ( T_c=25°C)

Items

Symbols

Ratings

Units

Min.

Max.

900

DC Bus Voltage

V_DC

DC Bus Voltage (surge)

DC Bus Voltage (short operating)

Collector-Emitter Voltage

Inverter

Collector

Current

Collector Power Dissipation

Dynamic Brake

Collector Current

V_DC(Surge)

V_SC

V_CES

I_C

I_CP

-I_C

P_C

I_C

200

1000

800

1200

150

595

Continuous

1ms

Duty=62.6%

One Transistor

Continuous

1ms

I_CP

Forward Current of Diode

Collector Power Dissi. DB

Voltage of Power Supply for Driver

Input Signal Voltage

I_F

P_C

V_CC

V_IN

198

One Transistor

V_Z

Input Signal Current

I_IN

V_ALM

I_ALM

T_j

T_OP

T_stg

V_iso

V_CC

150

100

125

2500

3.5

Alarm Signal Voltage

Alarm Signal Current

Junction Temperature

Operating Temperature

Storage Temperature

-20

-40

°C

Isolation Voltage

A.C. 1min.

Mounting *1

Terminals *1

Screw Torque

Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)

• Electrical Characteristics of Power Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

Conditions

V_CE=1200V, Input Terminal Open

I_C=75A

Min.

Typ.

Max.

1.0

2.6

3.0

1.0

2.6

3.3

Units

Collector Current At Off Signal Input

INV Collector-Emitter Saturation Voltage

Forward Voltage of FWD

I_CES

V_CE(Sat)

V_F

-I_C=75A

Collector Current At Off Signal Input

I_CES

_CE=1200V, Input Terminal Open

Collector-Emitter Saturation Voltage

Forward Voltage of FWD

V_CE(Sat)

V_F

I_C=25A

-I_C=25A

• Electrical Characteristics of Control Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

Conditions

f_SW=0~15kHz, T_C=-20~100°C

Min.

1.00

1.25

Typ.

Max.

1.70

1.95

Units

Current of P-Line Side Driver (One Unit)

Current of N-Line Side Driver (Three Units)

I_CCP

I_CCN

1.35

1.60

8.0

V_IN(th)

Input Signal Threshold Voltage

Off

Input Zener Voltage

V_Z

R_IN=20kW

Over Heating Protection Temperature Level

Hysteresis

IGBT Chips Over Heating Protec. Temp. Level

Hysteresis

Inverter Collector Current Protection Level

DB Collector Current Protection Level

Over Current Detecting Time

Alarm Signal Hold Time

Limiting Resistor for Alarm

Under Voltage Protection Level

Hysteresis

T_COH

T_CH

T_jOH

T_jH

I_OC

t_DOC

t_ALM

R_ALM

V_UV

V_H

V_DC=0V, I_C=0A, Case Temp.

110

150

125

°C

Surface Of IGBT Chip

T_j=125°C

T_j=25°C

113

1500

µs

1.5

1425

11.0

0.2

1575

12.5

• Dynamic Characteristics ( at T_C=T_j=125°C, V_CC=15V )

Items

Symbols

Conditions

Min.

Typ.

Max.

Units

t_ON

I_C=75A, V_DC=600V

0.3

Switching Time

t_OFF

t_RR

3.6

0.4

µs

I_F=75A, V_DC=600V

12 3 4 5 6 7

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