Datasheet > 7MBP200XEN120-50

7MBP200XEN120-50

更新时间： 2024-03-03 10:10:27

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
15页	1499K
描述
IPM(Inv.+Gate Driver) P631

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数据手册

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7MBP200XEN120-50 数据手册

7MBP200XEN120-50

IGBT Modules

Thermal resistance characteristics (T _C= 25℃)

■

Item

Symbol

R _th(j-c)Q

R _th(j-c)D

R _th(j-c)Q

R _th(j-c)D

R _th(c-s)

Min. Typ. Max. Units

IGBT

0.143 K/W

0.224 K/W

0.237 K/W

0.395 K/W

Inverter

Brake

Thermal resistance

junction to case

*13

FWD

IGBT

FWD

0.05

K/W

Thermal resistance case to heat sink *14

*13: For 1 device ，the measurement point of the case is just under the chip.

*14: This is the value which is defined mounting on the additional heat sink with 1 W/(m·K) thermal grease.

Noise immunity (V _DC=600V, V _CC=15V)

■

Item

Conditions

Min. Typ. Max. Units

Common mode

rectangular noise

Pulse width 1μs,polarity ±,10min.

Judge：no over-current, no miss operating

±2.0

Recommended operating conditions

■

Item

Symbol

V _DC

V _CC

f _SW

t _dead

Min. Typ. Max. Units

800

DC bus voltage

13.5 15.0 16.5

Power supply voltage of pre-driver

Switching frequency of IPM

Arm short through blocking time for IPM's input signal *15

Screw torque (M4)

20.0

3.5

kHz

μs

1.5

2.5

_dead= t _off- t _d(on)

*15:

FM6M2053a

2023/03

1 2 345 6 7...15

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