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74S225 PDF预览

74S225

更新时间: 2024-09-27 22:22:07
品牌 Logo 应用领域
德州仪器 - TI 存储输出元件
页数 文件大小 规格书
10页 148K
描述
16 】 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY WITH 3-STATE OUTPUTS

74S225 数据手册

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SN74S225  
16 × 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY  
WITH 3-STATE OUTPUTS  
SDLS207B – SEPTEMBER 1976 – REVISED APRIL 1998  
N PACKAGE  
(TOP VIEW)  
Independent Asychronous Inputs and  
Outputs  
16 Words by 5 Bits  
CLKA  
V
CC  
19 CLKB  
1
2
3
4
5
6
7
8
9
10  
20  
DC to 10-MHz Data Rate  
3-State Outputs  
IR  
UNCK OUT  
18 CLR  
17  
16  
15  
14  
13  
12  
11  
D0  
D1  
D2  
D3  
D4  
OR  
UNCK IN  
Q0  
Q1  
Q2  
Packaged in Standard Plastic 300-mil DIPs  
description  
This 80-bit active-element memory is a monolithic  
Schottky-clamped transistor-transistor logic  
(STTL) array organized as 16 words by 5 bits. A  
memory system using the SN74S225 easily can  
be expanded in multiples of 48 words or of 10 bits  
as shown in Figure 3. The 3-state outputs  
controlled by a single output-enable (OE) input  
make bus connection and multiplexing easy.  
OE  
GND  
Q3  
Q4  
A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array  
at independent data rates. This FIFO is designed to process data at rates from dc to 10 MHz in a bit-parallel  
format, word by word.  
Reading or writing is done independently, utilizing separate asynchronous data clocks. Data can be written into  
the array on the low-to-high transition of either load-clock (CLKA, CLKB) input. Data can be read out of the array  
on the low-to-high transition of the unload-clock (UNCK IN) input (normally high). Writing data into the FIFO can  
be accomplished in one of two ways:  
In applications not requiring a gated clock control, best results are achieved by applying the clock input to  
one of the clocks while tying the other clock input high.  
In applications needing a gated clock, the load clock (gate control) must be high for the FIFO to load on the  
next clock pulse.  
CLKA and CLKB can be used interchangeably for either clock gate control or clock input.  
Status of the SN74S225 is provided by three outputs. The input-ready (IR) output monitors the status of the last  
word location and signifies when the memory is full. This output is high whenever the memory is available to  
accept any data. The unload-clock (UNCK OUT) output also monitors the last word location. This output  
generatesalow-logic-levelpulse(synchronizedtotheinternalclockpulse)whenthelocationisvacant. Thethird  
status output, output ready (OR), is high when the first word location contains valid data and UNCK IN is high.  
When UNCK IN goes low, OR will go low and stay low until new valid data is in the first word position. The first  
word location is defined as the location from which data is provided to the outputs.  
The data outputs are noninverted with respect to the data inputs and are 3-state, with a common control input  
(OE). When OE is low, the data outputs are enabled to function as totem-pole outputs. A high logic level forces  
each data output to a high-impedance state while all other inputs and outputs remain active.The clear (CLR)  
input invalidates all data stored in the memory array by clearing the control logic and setting OR to a low logic  
level on the high-to-low transition of a low-active pulse.  
The SN74S225 is characterized for operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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