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74LVC1GX04DRLRG4 PDF预览

74LVC1GX04DRLRG4

更新时间: 2024-01-15 20:12:32
品牌 Logo 应用领域
德州仪器 - TI 振荡器晶体振荡器驱动器栅极逻辑集成电路光电二极管
页数 文件大小 规格书
19页 718K
描述
CRYSTAL OSCILLATOR DRIVER

74LVC1GX04DRLRG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:VSON,针数:6
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.55系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-N6JESD-609代码:e4
长度:1.6 mm逻辑集成电路类型:INVERTER/BUFFER
湿度敏感等级:1功能数量:1
输入次数:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260传播延迟(tpd):18 ns
认证状态:Not Qualified座面最大高度:0.6 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.2 mm
Base Number Matches:1

74LVC1GX04DRLRG4 数据手册

 浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第1页浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第3页浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第4页浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第5页浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第6页浏览型号74LVC1GX04DRLRG4的Datasheet PDF文件第7页 
SN74LVC1GX04  
CRYSTAL OSCILLATOR DRIVER  
www.ti.com  
SCES581BJULY 2004REVISED DECEMBER 2006  
DESCRIPTION/ORDERING INFORMATION (CONTINUED)  
X1 and X2 can be connected to a crystal or resonator in oscillator applications. The device provides an  
additional buffered inverter (Y) for signal conditioning (see Figure 3). The additional buffered inverter improves  
the signal quality of the crystal oscillator output by making it rail to rail.  
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using Ioff (Y output only). The Ioff circuitry  
disables the outputs, preventing damaging current backflow through the device when it is powered down.  
FUNCTION TABLE  
OUTPUTS  
X2  
INPUT  
X1  
Y
H
L
H
L
L
H
LOGIC DIAGRAM (POSITIVE LOGIC)  
6
4
Y
3
X1  
X2  
Absolute Maximum Ratings(1)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.5  
–0.5  
–0.5  
MAX  
6.5  
UNIT  
V
VCC  
VI  
Supply voltage range  
Input voltage range(2)  
Voltage range applied to Y output in the high-impedance or power-off state(2)  
Voltage range applied to any output in the high or low state(2)(3)  
6.5  
V
VO  
VO  
IIK  
6.5  
V
–0.5 VCC + 0.5  
V
Input clamp current  
VI < 0  
–50  
–50  
±50  
±100  
165  
259  
142  
123  
mA  
mA  
mA  
mA  
IOK  
IO  
Output clamp current  
VO < 0  
Continuous output current  
Continuous current through VCC or GND  
DBV package  
DCK package  
DRL package  
YEP/YZP package  
θJA  
Package thermal impedance(4)  
°C/W  
°C  
Tstg  
Storage temperature range  
–65  
150  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.  
(3) The value of VCC is provided in the recommended operating conditions table.  
(4) The package thermal impedance is calculated in accordance with JESD 51-7.  
2
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