74HCT1G32GV

更新时间： 2024-02-17 23:20:24

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	75K
描述
2-input OR gate

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数据手册

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74HCT1G32GV 数据手册

Philips Semiconductors

Product speciﬁcation

2-input OR gate

74HC1G32; 74HCT1G32

DC CHARACTERISTICS

Family 74HC1G

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125

MIN. MAX.

1.5

UNIT

V_CC

(V)

OTHER

MIN. TYP.⁽¹⁾MAX.

V_IH

HIGH-level input voltage

2.0

1.5

3.15

4.2

−

1.2

2.4

3.2

0.8

2.1

2.8

2.0

−

4.5

6.0

2.0

4.5

6.0

2.0

−

3.15

4.2

−

V_IL

LOW-level input voltage

0.5

1.35

1.8

−

0.5

1.35

1.8

−

V_OH

HIGH-level output

voltage

V_I= V_IHor V_IL;

I_O= −20 µA

1.9

V_I= V_IHor V_IL;

I_O= −20 µA

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

4.4

5.9

4.13

5.63

−

4.5

6.0

4.32

5.81

−

4.4

5.9

3.7

5.2

−

V_I= V_IHor V_IL;

I_O= −20 µA

−

V_I= V_IHor V_IL;

I_O= −2.0 mA

−

V_I= V_IHor V_IL;

I_O= −2.6 mA

−

V_OL

LOW-level output voltage V_I= V_IHor V_IL;

0.1

0.33

0.1

0.4

I_O= 20 µA

V_I= V_IHor V_IL;

I_O= 20 µA

−

V_I= V_IHor V_IL;

I_O= 20 µA

−

V_I= V_IHor V_IL;

I_O= 2.0 mA

−

0.15

0.16

−

V_I= V_IHor V_IL;

I_O= 2.6 mA

−

I_Ll

input leakage current

V_I= V_CCor GND

−

1.0

−

1.0

µA

I_CC

quiescent supply current V_I= V_CCor GND; 6.0

I_O= 0

Note

1. All typical values are measured at T_amb= 25 °C.

2002 May 15

1 2 3 456 7 8...16

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