74AHC1G86GV

更新时间： 2024-01-11 20:46:14

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	77K
描述
2-input EXCLUSIVE-OR gate

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数据手册

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74AHC1G86GV 数据手册

Philips Semiconductors

Product speciﬁcation

2-input EXCLUSIVE-OR gate

74AHC1G86; 74AHCT1G86

FEATURES

DESCRIPTION

• Symmetrical output impedance

• High noise immunity

The 74AHC1G/AHCT1G86 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G86 provides the 2-input

EXCLUSIVE-OR function.

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Very small 5-pin package

• Output capability: standard

• Specified from −40 to +125 °C.

QUICK REFERENCE DATA

Ground = 0 V; T_amb= 25 °C; t_r= t_f≤ 3.0 ns.

TYPICAL

SYMBOL

PARAMETER

CONDITIONS

UNIT

AHC1G AHCT1G

t_PHL/t_PLHpropagation delay A and B to Y

C_L= 15 pF; V_CC= 5 V

3.4

3.5

1.5

C_I

input capacitance

1.5

C_PD

power dissipation capacitance

C_L= 50 pF; f = 1 MHz;

notes 1 and 2

Notes

1. C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i+ (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in Volts.

2. The condition is V_I= GND to V_CC

2002 Jun 06

123 4 5 6 7...16

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