IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 2(1)
tRC
ADDRESS
OE
tOH
tAA
(3)
tOHZ
tOE
(3)
tOLZ
CS
(2)
tACS
(3)
(3)
tCHZ
tCLZ
BLE
BHE,
(2)
t
BE
(3)
(3)
BHZ
t
tBLZ
DATAOUT
DATAOUT VALID
6442 drw 07
NOTES:
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise tAA is the limiting parameter.
3. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)
tWC
ADDRESS
tAW
CS
(2)
(5)
(5)
tCW
t
CHZ
tBW
BHE
,
BLE
WE
tWR
t
BHZ
tWP
tAS
(5)
tWHZ
(5)
tOW
PREVIOUS DATA VALID (3)
DATA VALID
DATAOUT
DATAIN
tDH
t
DW
DATAIN VALID
6442 drw 0
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data
to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as
short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
6.462