IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
71V416S/L10(2)
71V416S/L12
71V416S/L15
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
____
____
____
t
RC
AA
ACS
Read Cycle Time
10
12
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
____
____
____
t
Address Access Time
Chip Select Access Time
10
12
15
____
____
____
t
10
12
15
(1)
CLZ
____
____
____
t
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
4
4
4
(1)
____
____
____
tCHZ
5
6
7
____
____
____
tOE
5
6
7
(1)
(1)
____
____
____
tOLZ
0
0
0
____
____
____
t
OHZ
OH
BE
5
6
7
____
____
____
t
4
4
4
____
____
____
t
5
6
7
(1)
____
____
____
tBLZ
Byte Enable Low to Output in Low-Z
Byte Enable High to Output in High-Z
0
0
0
(1)
____
____
____
tBHZ
5
6
7
WRITE CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
WC
AW
CW
BW
AS
WR
WP
DW
DH
Write Cycle Time
10
8
8
8
0
0
8
5
0
12
8
8
8
0
0
8
6
0
15
10
10
10
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
t
t
t
t
Address Hold from End of Write
Write Pulse Width
0
t
10
7
t
Data Valid to End of Write
Data Hold Time
t
0
(1)
OW
t
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
3
3
3
(1)
WHZ
____
____
____
t
6
7
7
ns
6442 tbl 10
NOTE:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. Low power 10ns (L10) speed 0ºC to +70ºC temperature range only.
Timing Waveform of Read Cycle No. 1(1,2,3)
tRC
ADDRESS
t
AA
tOH
tOH
DATAOUT VALID
DATAOUT
PREVIOUS DATAOUT VALID
NOTES:
6442d06
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. OE, BHE, and BLE are LOW.
6.42
5