Datasheet > 71V416YL12YG1

71V416YL12YG1

更新时间： 2024-02-29 22:23:35

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
9页	137K
描述
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

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技术参数
数据手册

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71V416YL12YG1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SOJ, SOJ44,.44
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

71V416YL12YG1 数据手册

IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM

for Automotive Applications 4 Meg (256K x 16-Bit)

Automotive Temperature Ranges

Pin Configurations - SOJ/TSOP

Pin Configurations - 48 BGA

A17

A16

BLE

A15

I/O0

I/O1

VSS

VDD

I/O6

I/O7

I/O8

I/O9

BHE

I/O2

I/O3

I/O4

I/O5

BHE

BLE

I/O10

I/O11

I/O12

I/O13

I/O 0

I/O 1

I/O 2

I/O 3

I/O 15

I/O 14

I/O 13

I/O 12

A17

A14

A12

VDD

VSS

SO44-1

SO44-2

A16

A15

A13

VSS

I/O 4

I/O 5

I/O 6

I/O 7

VDD

I/O14

I/O15

I/O 11

I/O 10

I/O 9

I/O 8

NC*

A14

A13

A12

6817 tbl 11

PinDescriptions

A11

A10

A⁰- A¹⁷

Address Inputs

Input

I/O

Chip Select

Write Enable

Output Enable

6817 drw 02

*Pin 28 can either be a NC or connected to Vss

High Byte Enable

Low Byte Enable

Data Input/Output

3.3V Power

BHE

BLE

Top View

I/O⁰- I/O¹⁵

V^DD

Pwr

V^SS

Ground

Gnd

6817 tbl 01

Truth Table⁽¹⁾

I/O^0-I/O⁷

High-Z

I/O^8-I/O¹⁵

BLE

BHE

Function

High-Z

Deselected - Standby

Low Byte Read

High Byte Read

Word Read

DATA^OUT

High-Z

DATA^OUT

DATA^IN

High-Z

DATA^OUT

DATA^IN

High-Z

Word Write

Low Byte Write

High Byte Write

Outputs Disabled

DATA^IN

High-Z

NOTE:

1. H = VIH, L = VIL, X = Don't care.

6817 tbl 03

6.422

123 4 5 6 7...9

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