Datasheet > 71V016SA15Y8

71V016SA15Y8

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
9页	907K
描述
Standard SRAM, 64KX16, 15ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

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71V016SA15Y8 数据手册

IDT71V016SA/HSA

3.3V CMOS Static RAM

1 Meg (64K x 16-Bit)

Features

Description

◆

64K x 16 advanced high-speed CMOS Static RAM

TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganized

as64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliability

CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-

vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

speedmemoryneeds.

◆

Equal access and cycle times

— Commercial:10/12/15/20ns

— Industrial:12/15/20ns

One Chip Select plus one Output Enable pin

◆

Bidirectional data inputs and outputs directly

The IDT71V016 has an output enable pin which operates as fast

as 5ns, with address access times as fast as 10ns. All bidirectional

inputsandoutputsoftheIDT71V016areLVTTL-compatibleandoperation

isfromasingle3.3Vsupply.Fullystaticasynchronouscircuitryisused,

requiringnoclocks orrefreshforoperation.

LVTTL-compatible

Low power consumption via chip deselect

Upper and Lower Byte Enable Pins

Single 3.3V power supply

◆

Available in 44-pin Plastic SOJ, 44-pin TSOP, and

The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic

SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.

48-Ball Plastic FBGA packages

Functional Block Diagram

Output

Enable

Buffer

Address

Buffers

Row / Column

Decoders

A0 – A15

I/O15

High

Chip

Enable

Buffer

Byte

I/O

Buffer

I/O8

Sense

Amps

and

Write

Drivers

64K x 16

Memory

Array

Write

Enable

Buffer

I/O7

I/O0

Low

Byte

I/O

Buffer

BHE

BLE

Byte

Enable

Buffers

3834 drw 01

OCTOBER 2008

DSC-3834/10

12 3 4 5 6 7...9

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