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71P72604S167BQG PDF预览

71P72604S167BQG

更新时间: 2024-10-02 21:05:23
品牌 Logo 应用领域
艾迪悌 - IDT 时钟静态存储器内存集成电路
页数 文件大小 规格书
21页 869K
描述
CABGA-165, Tray

71P72604S167BQG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:CABGA
包装说明:13 X 15 MM, GREEN, FPBGA-165针数:165
Reach Compliance Code:unknownECCN代码:3A991
HTS代码:8542.32.00.41风险等级:5.8
最长访问时间:0.5 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):167 MHzI/O 类型:SEPARATE
JESD-30 代码:R-PBGA-B165JESD-609代码:e1
长度:15 mm内存密度:18874368 bit
内存集成电路类型:QDR SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:165字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA165,11X15,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.5/1.8,1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
最小待机电流:1.7 V子类别:SRAMs
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:13 mm
Base Number Matches:1

71P72604S167BQG 数据手册

 浏览型号71P72604S167BQG的Datasheet PDF文件第2页浏览型号71P72604S167BQG的Datasheet PDF文件第3页浏览型号71P72604S167BQG的Datasheet PDF文件第4页浏览型号71P72604S167BQG的Datasheet PDF文件第5页浏览型号71P72604S167BQG的Datasheet PDF文件第6页浏览型号71P72604S167BQG的Datasheet PDF文件第7页 
18Mb Pipelined  
QDR™II SRAM  
Burst of 2  
IDT71P72804  
IDT71P72604  
Features  
Description  
The IDT QDRIITM Burst of two SRAMs are high-speed synchro-  
nous memories with independent, double-data-rate (DDR), read and  
write data ports. This scheme allows simultaneous read and write  
access for the maximum device throughput, with two data items passed  
with each read or write. Four data word transfers occur per clock  
cycle, providing quad-data-rate (QDR) performance. Comparing this  
with standard SRAM common I/O (CIO), single data rate (SDR) de-  
vices, a four to one increase in data access is achieved at equivalent  
clock speeds. Considering that QDRII allows clock speeds in excess of  
standard SRAM devices, the throughput can be increased well beyond  
four to one in most applications.  
18Mb Density (1Mx18, 512kx36)  
Separate, Independent Read and Write Data Ports  
Supports concurrent transactions  
-
Dual Echo Clock Output  
2-Word Burst on all SRAM accesses  
DDR (Double Data Rate) MultiplexedAddress Bus  
-
One Read and One Write request per clock cycle  
DDR (Double Data Rate) Data Buses  
-
-
Two word burst data per clock on each port  
Four word transfers per clock cycle (2 word bursts  
on 2 ports)  
Depth expansion through Control Logic  
HSTL (1.5V) inputs that can be scaled to receive signals  
from 1.4V to 1.9V.  
Using independent ports for read and write data access, simplifies  
system design by eliminating the need for bi-directional buses. All buses  
associated with the QDRII are unidirectional and can be optimized for  
signal integrity at very high bus speeds. The QDRII has scalable output  
impedance on its data output bus and echo clocks, allowing the user to  
tune the bus for low noise and high performance.  
Scalable output drivers  
-
Can drive HSTL, 1.8V TTL or any voltage level  
from 1.4V to 1.9V.  
-
Output Impedance adjustable from 35 ohms to 70  
ohms  
The QDRII has a single DDR address bus with multiplexed read  
and write addresses. All read addresses are received on the first half of  
the clock cycle and all write addresses are received on the second half  
of the clock cycle. The read and write enables are received on the first  
half of the clock cycle. The byte and nibble write signals are received on  
both halves of the clock cycle simultaneously with the data they are  
controlling on the data input bus.  
Commercial and IndustrialTemperature Ranges  
1.8V Core Voltage (VDD)  
165-ball, 1.0mm pitch, 13mm x 15mm fBGA Package  
JTAG Interface  
Functional Block Diagram  
(Note1)  
(Note1)  
(Note1)  
DATA  
DATA  
REG  
D
REG  
WRITE DRIVER  
(Note2)  
(Note3)  
ADD  
REG  
(Note2)  
SA  
(Note4)  
(Note4)  
(Note1)  
18M  
MEMORY  
ARRAY  
Q
R
W
BWx  
CTRL  
LOGIC  
K
CLK  
GEN  
CQ  
K
CQ  
C
SELECT OUTPUT CONTROL  
C
6109 drw 16  
Notes  
1) Represents 18 signal lines for x18, and 36 signal lines for x36  
2) Represents 19 address signal lines for x18, and 18 address signal lines for x36.  
3) Represents 2 signal lines for x18, and 4r signal lines for x36.  
4) Represents 36 signal lines for x18, and 72 signal lines for x36.  
OCTOBER 2008  
1
©2005 Integrated Device Technology, Inc. QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Micron Technology, Inc.  
DSC-6109/0A  

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